公开(公告)号：US20170263656A1

公开(公告)日：2017-09-14

申请号：US15601020

申请日：2017-05-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： MICHAEL S. GORDON ,  TAK H. NING ,  KENNETH P. RODBELL ,  JENG-BANG YAU

IPC分类号： H01L27/144 ,  H01L31/18 ,  H01L31/118

CPC分类号： H01L27/1443 ,  G01T1/026 ,  H01L31/115 ,  H01L31/118 ,  H01L31/18

摘要： An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

公开(公告)号：US20170110492A1

公开(公告)日：2017-04-20

申请号：US14884725

申请日：2015-10-15

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： MICHAEL S. GORDON ,  TAK H. NING ,  KENNETH P. RODBELL ,  JENG-BANG YAU

IPC分类号： H01L27/144 ,  H01L31/18 ,  H01L31/118

CPC分类号： H01L27/1443 ,  G01T1/026 ,  H01L31/115 ,  H01L31/118 ,  H01L31/18

摘要： An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.