公开(公告)号：US20130292798A1

公开(公告)日：2013-11-07

申请号：US13939694

申请日：2013-07-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy W. KEMERER ,  James S. NAKOS ,  Steven M. SHANK

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01L27/016 ,  H01L27/0682 ,  H01L28/40 ,  H01L28/90

Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.

Abstract translation: 在相应的浅沟槽隔离结构中提供电阻器和电容器。 该方法包括在衬底中形成第一和第二沟槽，并在第一和第二沟槽内形成第一绝缘体层。 该方法包括在第一和第二沟槽内，在第一绝缘体层上形成第一电极材料，以及在第一和第二沟槽内和第一电极材料上形成第二绝缘体层。 该方法包括在第二绝缘体层上在第一和第二沟槽内形成第二电极材料。 第二电极材料夹住第二沟槽。 该方法包括在第一沟槽的底部处去除第二电极材料和第二绝缘体层的一部分，并且用另外的第二电极材料填充第一沟槽。 附加的第二电极材料与第一电​​极材料电接触。

公开(公告)号：US20140258958A1

公开(公告)日：2014-09-11

申请号：US14151866

申请日：2014-01-10

Applicant: International Business Machines Corporation

Inventor： John A. FIFIELD ,  Mark C. HAKEY ,  Jason D. HIBBELER ,  James S. NAKOS ,  Tak H. NING ,  Kenneth P. RODBELL ,  Ronald D. ROSE ,  Henry H.K. TANG ,  Larry WISSEL

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F11/1048 ,  G06F17/505

Abstract: A method is provided to convert commercial microprocessors to radiation-hardened processors and, more particularly, a method is provided to modify a commercial microprocessor for radiation hardened applications with minimal changes to the technology, design, device, and process base so as to facilitate a rapid transition for such radiation hardened applications. The method is implemented in a computing infrastructure and includes evaluating a probability that one or more components of an existing commercial design will be affected by a single event upset (SEU). The method further includes replacing the one or more components with a component immune to the SEU to create a final device.

Abstract translation: 提供了一种将商业微处理器转换为辐射硬化处理器的方法，更具体地，提供了一种方法，以便以最小的技术，设计，设备和工艺基础的改变来修改用于辐射硬化应用的商业微处理器，以便于 这种辐射硬化应用的快速过渡。 该方法在计算基础设施中实现，并且包括评估现有商业设计的一个或多个组件将受到单个事件不适（SEU）的影响的概率。 该方法还包括用免疫SEU的成分替换一个或多个成分以产生最终的装置。