公开(公告)号：US20150331183A1

公开(公告)日：2015-11-19

申请号：US14278689

申请日：2014-05-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Brennan J. BROWN ,  James R. ELLIOTT ,  Qizhi LIU ,  Steven M. SHANK

IPC: G02B6/125 ,  H01L33/58 ,  H01L31/0232 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/125 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12061 ,  H01L31/02327 ,  H01L33/58

Abstract: Si waveguide devices on a bulk Si substrate with supporting anchors and methods of manufacture are disclosed. The method includes forming a waveguide device over an Si substrate, and forming one or more anchors from the Si substrate. The one or more anchors support the waveguide device.

Abstract translation: 公开了具有支撑锚固体和制造方法的体积Si衬底上的Si波导器件。 该方法包括在Si衬底上形成波导器件，并从Si衬底形成一个或多个锚固件。 一个或多个锚固件支撑波导装置。

公开(公告)号：US20160322419A1

公开(公告)日：2016-11-03

申请号：US14699015

申请日：2015-04-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  John C.S. HALL ,  Marwan H. KHATER ,  Edward W. KIEWRA ,  Steven M. SHANK

IPC: H01L27/146

CPC classification number: H01L31/202 ,  H01L21/02667 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14698 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/208

Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

Abstract translation: 提供光电检测器结构和制造方法。 该方法包括形成底物上形成的检测器材料的底切。 该方法还包括将检测器封装以形成来自底切的气隙。 该方法还包括退火检测器材料，导致检测器材料膨胀到气隙中。

公开(公告)号：US20160018677A1

公开(公告)日：2016-01-21

申请号：US14332886

申请日：2014-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  William M. GREEN ,  Michael J. HAUSER ,  Edward W. KIEWRA ,  Xuefeng LIU ,  Steven M. SHANK

IPC: G02F1/025 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/40 ,  G02B6/136 ,  H01L29/49 ,  H01L27/088 ,  H01L21/306 ,  H01L29/66 ,  H01L27/06 ,  H01L29/78 ,  H01L29/06

CPC classification number: G02F1/025 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01L21/30604 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7823 ,  H01L29/7824 ,  H01L29/78624

Abstract: A device includes a laterally diffused metal-oxide-semiconductor (LDMOS) device integrated with an optical modulator. An optical waveguide of the optical modulator includes a silicon-containing structure in a drift region of the LDMOS device.

Abstract translation: 一种器件包括与光学调制器集成的横向扩散的金属氧化物半导体（LDMOS）器件。 光调制器的光波导包括在LDMOS器件的漂移区域中的含硅结构。

公开(公告)号：US20150115270A1

公开(公告)日：2015-04-30

申请号：US14068461

申请日：2013-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  William J. MURPHY ,  Kirk D. PETERSON ,  Steven M. SHANK

IPC: H01L31/0203 ,  H01L31/20

CPC classification number: H01L31/0203 ,  H01L31/1872 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521

Abstract: An encapsulated sensors and methods of manufacture are disclosed herein. The method includes forming an amorphous or polycrystalline material in contact with a layer of seed material. The method further includes forming an expansion space for the amorphous or polycrystalline material. The method further includes forming an encapsulation structure about the amorphous or polycrystalline material. The method further includes crystallizing the amorphous or polycrystalline material by a thermal anneal process such that the amorphous or polycrystalline material expands within the expansion space.

Abstract translation: 封装的传感器和制造方法在本文中公开。 该方法包括形成与种子材料层接触的无定形或多晶材料。 该方法还包括形成用于非晶或多晶材料的膨胀空间。 该方法还包括形成关于非晶或多晶材料的封装结构。 该方法还包括通过热退火工艺使非晶或多晶材料结晶，使得非晶或多晶材料在膨胀空间内膨胀。

公开(公告)号：US20130292798A1

公开(公告)日：2013-11-07

申请号：US13939694

申请日：2013-07-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy W. KEMERER ,  James S. NAKOS ,  Steven M. SHANK

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01L27/016 ,  H01L27/0682 ,  H01L28/40 ,  H01L28/90

Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.

Abstract translation: 在相应的浅沟槽隔离结构中提供电阻器和电容器。 该方法包括在衬底中形成第一和第二沟槽，并在第一和第二沟槽内形成第一绝缘体层。 该方法包括在第一和第二沟槽内，在第一绝缘体层上形成第一电极材料，以及在第一和第二沟槽内和第一电极材料上形成第二绝缘体层。 该方法包括在第二绝缘体层上在第一和第二沟槽内形成第二电极材料。 第二电极材料夹住第二沟槽。 该方法包括在第一沟槽的底部处去除第二电极材料和第二绝缘体层的一部分，并且用另外的第二电极材料填充第一沟槽。 附加的第二电极材料与第一电​​极材料电接触。