公开(公告)号：US20140151899A1

公开(公告)日：2014-06-05

申请号：US14166274

申请日：2014-01-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Douglas D. COOLBAUGH ,  Keith E. DOWNES ,  Peter J. LINDGREN ,  Anthony K. STAMPER

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  H01L23/5223 ,  H01L28/60 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and a semiconductor device are provided. The semiconductor device includes a partial via etched in a stacked structure and a trough above the partial via. The method includes performing thick wiring using selective etching while etching the partial via to an etch stop layer.

Abstract translation: 提供了一种方法和半导体器件。 半导体器件包括以层叠结构蚀刻的部分通孔和部分通孔上方的槽。 该方法包括使用选择性蚀刻执行厚布线，同时将部分通孔蚀刻到蚀刻停止层。