MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES
    7.
    发明申请
    MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES 有权
    CMOS和BiCMOS技术中的微电脑器件

    公开(公告)号:US20160146672A1

    公开(公告)日:2016-05-26

    申请号:US14553203

    申请日:2014-11-25

    Abstract: A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.

    Abstract translation: 公开了与CMOS和BiCMOS技术以及制造方法集成的微测辐射计装置。 该方法包括形成微量热计单元电池,包括损坏基板的一部分以形成受损区域。 该方法还包括在损伤区域上形成红外(IR)吸收材料。 该方法还包括通过在IR吸收材料下形成空腔来隔离IR吸收材料。

Patent Agency Ranking