公开(公告)号：US11557690B2

公开(公告)日：2023-01-17

申请号：US16847038

申请日：2020-04-13

Applicant: International Business Machines Corporation

Inventor： Douglas M. Bishop ,  Yun Seog Lee ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0468 ,  H01L31/0749 ,  H01L31/0272

Abstract: Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

公开(公告)号：US20200243707A1

公开(公告)日：2020-07-30

申请号：US16847038

申请日：2020-04-13

Applicant: International Business Machines Corporation

Inventor： Douglas M. Bishop ,  Yun Seog Lee ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/18 ,  H01L31/0749 ,  H01L31/0224 ,  H01L31/0468 ,  H01L31/0272

Abstract: Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

公开(公告)号：US20180294368A1

公开(公告)日：2018-10-11

申请号：US16009098

申请日：2018-06-14

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Bruce A. Ek ,  Richard A. Haight ,  Ravin Mankad ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/032 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/072

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

公开(公告)号：US20180233622A1

公开(公告)日：2018-08-16

申请号：US15431900

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Douglas M. Bishop ,  Yun Seog Lee ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0216

CPC classification number: H01L51/4213 ,  H01L51/0047 ,  Y02P70/521

Abstract: Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.

公开(公告)号：US20180097130A1

公开(公告)日：2018-04-05

申请号：US15281789

申请日：2016-09-30

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Bruce A. Ek ,  Richard A. Haight ,  Ravin Mankad ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/032 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0326 ,  H01L31/022425 ,  H01L31/1896

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

公开(公告)号：US11302967B2

公开(公告)日：2022-04-12

申请号：US15871488

申请日：2018-01-15

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Oki Gunawan ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01M10/0585 ,  H01M10/0525 ,  H01M10/0562 ,  H01M4/04 ,  H01M4/131 ,  H01M4/48 ,  H01M4/525 ,  H01M4/66 ,  H01M10/04

Abstract: Low-voltage rechargeable microbatteries are provided. In one aspect, a method of forming a microbattery includes: forming a cathode on a substrate, wherein the cathode includes a lithium intercalated material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a negative contact on the anode. A microbattery is also provided.

公开(公告)号：US20190221842A1

公开(公告)日：2019-07-18

申请号：US15871464

申请日：2018-01-15

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Oki Gunawan ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01M4/48 ,  H01M10/0525 ,  H01M4/04 ,  H01M10/04 ,  H01M4/66 ,  H01M10/0562 ,  H01M10/0585

Abstract: Low-voltage rechargeable microbatteries having a vanadium-based cathode are provided. In one aspect, a method of forming a battery is provided. The method includes the steps of: forming a first contact on a substrate; forming a cathode on the first contact, wherein the cathode is formed from a vanadium-containing material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a second contact on the anode. A battery having a vanadium-based cathode is also provided.

公开(公告)号：US20180233609A1

公开(公告)日：2018-08-16

申请号：US15431878

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Douglas M. Bishop ,  Yun Seog Lee ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/032 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1884 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0468 ,  H01L31/0749 ,  Y02P70/521

Abstract: Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

公开(公告)号：US20180231804A1

公开(公告)日：2018-08-16

申请号：US15431867

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Douglas M. Bishop ,  Saurabh Singh ,  Teodor K. Todorov

IPC: G02C11/00 ,  H01L31/054 ,  H01L31/032 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/18 ,  G02C7/10 ,  G02C3/00

CPC classification number: G02C11/10 ,  G02C3/006 ,  G02C7/108 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0543 ,  H01L31/0549 ,  H01L31/18 ,  Y02E10/52

Abstract: Techniques for integrating photovoltaics into wearables, such as eyewear, are provided. In one aspect, a method of forming a lens for photovoltaic eyewear includes: forming a semitransparent photovoltaic film on at least a portion of a viewable area of the lens, wherein the semitransparent photovoltaic film includes an inorganic absorber material having a band gap of from about 1.4 eV to about 2.2 eV, and ranges therebetween. The semitransparent photovoltaic film can be configured to block greater than about 99.9% UVA, UVB, and UVC light rays, and from about 95% to about 99%, and ranges therebetween, of HEV light rays from passing therethrough. Photovoltaic eyewear formed by the present techniques is also provided.

公开(公告)号：US10790398B2

公开(公告)日：2020-09-29

申请号：US16009098

申请日：2018-06-14

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Bruce A. Ek ,  Richard A. Haight ,  Ravin Mankad ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/072

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.