公开(公告)号：US20230178429A1

公开(公告)日：2023-06-08

申请号：US17643408

申请日：2021-12-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： TSUNG-SHENG KANG ,  RUILONG XIE ,  TAO LI ,  CHIH-CHAO YANG

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3213

CPC分类号： H01L21/76879 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53252

摘要： A method of manufacturing an interconnect structure for a semiconductor device is provided. The method includes forming a metal interconnect layer on a substrate. The method includes forming a hardmask on the metal interconnect layer, patterning the metal interconnect layer and hardmask, forming a sacrificial material layer to overfill the patterned metal interconnect layer and hardmask, and selectively removing a portion of the sacrificial layer and the hardmask to form a via opening. The method also includes forming a via on the metal interconnect layer in the via opening by a selective metal growth process.