公开(公告)号：US20140264612A1

公开(公告)日：2014-09-18

申请号：US13834514

申请日：2013-03-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KANGGUO CHENG ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  THOMAS N. ADAM

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/088 ,  H01L21/02104 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/823418 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/78

Abstract: Embodiments include epitaxial source/drain regions having curved top surfaces and methods of forming the same. According to an exemplary embodiment, an epitaxial semiconductor region having a curved top surface may be formed by providing a region having a substantially planar bottom made of semiconductor material and sidewalls made of non-semiconductor material substantially perpendicular to the planar bottom, depositing a semiconductor layer having a crystalline portion on the flat bottom and amorphous portions on the sidewalls using a low pressure chemical vapor deposition process with a nitrogen carrier gas, and removing the amorphous portions from the sidewalls. To further increase the thickness of the epitaxial semiconductor region, the method may cycle between depositing a semiconductor layer having a crystalline portion on the flat bottom and amorphous portions on the sidewalls; and removing the amorphous portions on the sidewalls until the combined thickness of all the crystalline portions reaches a desired thickness.

Abstract translation: 实施例包括具有弯曲顶面的外延源/漏区及其形成方法。 根据示例性实施例，具有弯曲顶表面的外延半导体区域可以通过提供具有由半导体材料制成的基本平坦的底部的区域和基本上垂直于平面底部的非半导体材料制成的侧壁形成，沉积半导体层 通过使用氮载气的低压化学气相沉积工艺，在平坦的底部上具有结晶部分和侧壁上的非晶部分，以及从侧壁去除非晶部分。 为了进一步增加外延半导体区域的厚度，该方法可以在沉积在平坦底部上具有结晶部分的半导体层和侧壁上的非晶部分之间循环; 并除去侧壁上的非晶部分，直到所有结晶部分的组合厚度达到期望的厚度。