公开(公告)号：US20140134836A1

公开(公告)日：2014-05-15

申请号：US13672864

申请日：2012-11-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES, INC.

发明人： BALASUBRAMANIAN PRANATHARTHIHARAN ,  CHARAN VEERA VENKATA SATYA SURISETTY ,  JUNLI WANG ,  CHANG SEO PARK ,  RUILONG XIE

IPC分类号： H01L21/283

CPC分类号： H01L29/66545 ,  H01L21/76897 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653

摘要： Embodiments of the present invention provide a method of forming borderless contact for transistors. The method includes forming a sacrificial gate structure embedded in a first dielectric layer, the sacrificial gate structure including a sacrificial gate and a second dielectric layer surrounding a top and sidewalls of the sacrificial gate; removing a portion of the second dielectric layer that is above a top level of the sacrificial gate to create a first opening surrounded directly by the first dielectric layer; removing the sacrificial gate exposed by the removing of the portion of the second dielectric layer to create a second opening surrounded by a remaining portion of the second dielectric layer; filling the second opening with one or more conductive materials to form a gate of a transistor; and filling the first opening with a layer of dielectric material to form a dielectric cap of the gate of the transistor.

摘要翻译： 本发明的实施例提供了一种形成晶体管的无边界接触的方法。 该方法包括形成嵌入在第一介电层中的牺牲栅极结构，所述牺牲栅极结构包括牺牲栅极和围绕所述牺牲栅极的顶部和侧壁的第二介电层; 去除位于所述牺牲栅极顶层之上的所述第二电介质层的一部分以产生由所述第一介电层直接包围的第一开口; 去除通过去除第二介电层的部分而暴露的牺牲栅极，以产生由第二介电层的剩余部分包围的第二开口; 用一种或多种导电材料填充第二开口以形成晶体管的栅极; 以及用一层介电材料填充第一开口以形成晶体管的栅极的电介质盖。