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    Method of detaching a thin film at moderate temperature after co-implantation
    1.
    发明授权
    Method of detaching a thin film at moderate temperature after co-implantation 有权
    共植后在中等温度下分离薄膜的方法

    公开(公告)号：US07176108B2

    公开(公告)日：2007-02-13

    申请号：US10703694

    申请日：2003-11-06

    申请人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

    发明人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

    IPC分类号： H01L21/30 ,  H01L21/425

    CPC分类号： H01L21/76254

    摘要： A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

    摘要翻译： 从源底层分离薄膜的方法包括以下步骤：在源极衬底中注入离子或气态物质，以便在其中形成由于存在缺陷而被削弱的掩埋区; 并且在弱化区域中分裂，导致薄膜与源基板分离。 植入两种植物，其中一种适于形成缺陷，另一种适于占据这些缺陷，该脱离是在低于仅以第一种的剂量获得脱离的温度的温度下进行的。

    Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
    2.
    发明授权
    Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation 有权
    用于在植入或共同植入后通过脉动自我支持的精细层转移的方法

    公开(公告)号：US08309431B2

    公开(公告)日：2012-11-13

    申请号：US10577175

    申请日：2004-10-28

    申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

    发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

    IPC分类号： H01L21/46

    CPC分类号： H01L21/76254

    摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

    摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

    Method of catastrophic transfer of a thin film after co-implantation
    3.
    发明授权
    Method of catastrophic transfer of a thin film after co-implantation 有权
    共同植入后薄膜的灾难性转移方法

    公开(公告)号：US07772087B2

    公开(公告)日：2010-08-10

    申请号：US10975826

    申请日：2004-10-28

    申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

    发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/76254

    摘要： The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.

    摘要翻译： 本发明涉及一种薄膜的灾难性转移的方法，包括在源底物中注入在给定深度处的第一种离子或气体和第二种离子或气体，第一种适于产生缺陷，第二种适于产生缺陷，第二种 物种适应于占据这些缺陷。 该方法还包括施加与源基板紧密接触的加强件，在给定温度下对该源基板施加热处理给定时间，以便基本上在给定深度处产生埋入的弱化区域，而没有 引发薄膜的热分裂，以及将一定量的能量（例如机械应力）施加到该源极基底上，以引起薄膜的灾难性分裂，该薄膜具有与该表面相对的基本平坦的面 源基片的表面。

    Method for Self-Supported Transfer of a Fine Layer by Pulsation after Implantation or Co-Implantation
    4.
    发明申请
    Method for Self-Supported Transfer of a Fine Layer by Pulsation after Implantation or Co-Implantation 有权
    通过植入或共同植入后通过脉冲自我转移细层的方法

    公开(公告)号：US20070281445A1

    公开(公告)日：2007-12-06

    申请号：US10577175

    申请日：2004-10-28

    申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

    发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

    IPC分类号： H01L21/304

    CPC分类号： H01L21/76254

    摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

    摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

    Method of catastrophic transfer of a thin film after co-implantation
    5.
    发明申请
    Method of catastrophic transfer of a thin film after co-implantation 有权
    共同植入后薄膜的灾难性转移方法

    公开(公告)号：US20050148163A1

    公开(公告)日：2005-07-07

    申请号：US10975826

    申请日：2004-10-28

    申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

    发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

    IPC分类号： H01L21/30 ,  H01L21/762

    CPC分类号： H01L21/76254

    摘要： The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.

    摘要翻译： 本发明涉及一种薄膜的灾难性转移的方法，包括在源底物中注入在给定深度处的第一种离子或气体和第二种离子或气体，第一种适于产生缺陷，第二种适于产生缺陷，第二种 物种适应于占据这些缺陷。 该方法还包括施加与源基板紧密接触的加强件，在给定温度下对该源基板施加热处理给定时间，以便基本上在给定深度处产生埋入的弱化区域，而没有 引发薄膜的热分裂，以及将一定量的能量（例如机械应力）施加到该源极基底上，以引起薄膜的灾难性分裂，该薄膜具有与该表面相对的基本平坦的面 源基片的表面。