公开(公告)号：US07176108B2

公开(公告)日：2007-02-13

申请号：US10703694

申请日：2003-11-06

申请人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

发明人： Ian Cayrefourcq ,  Nadia Ben Mohamed ,  Christelle Lagahe-Blanchard ,  Nguyet-Phuong Nguyen

IPC分类号： H01L21/30 ,  H01L21/425

CPC分类号： H01L21/76254

摘要： A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

摘要翻译： 从源底层分离薄膜的方法包括以下步骤：在源极衬底中注入离子或气态物质，以便在其中形成由于存在缺陷而被削弱的掩埋区; 并且在弱化区域中分裂，导致薄膜与源基板分离。 植入两种植物，其中一种适于形成缺陷，另一种适于占据这些缺陷，该脱离是在低于仅以第一种的剂量获得脱离的温度的温度下进行的。

公开(公告)号：US08309431B2

公开(公告)日：2012-11-13

申请号：US10577175

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

公开(公告)号：US07772087B2

公开(公告)日：2010-08-10

申请号：US10975826

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.

摘要翻译： 本发明涉及一种薄膜的灾难性转移的方法，包括在源底物中注入在给定深度处的第一种离子或气体和第二种离子或气体，第一种适于产生缺陷，第二种适于产生缺陷，第二种 物种适应于占据这些缺陷。 该方法还包括施加与源基板紧密接触的加强件，在给定温度下对该源基板施加热处理给定时间，以便基本上在给定深度处产生埋入的弱化区域，而没有 引发薄膜的热分裂，以及将一定量的能量（例如机械应力）施加到该源极基底上，以引起薄膜的灾难性分裂，该薄膜具有与该表面相对的基本平坦的面 源基片的表面。

公开(公告)号：US20070281445A1

公开(公告)日：2007-12-06

申请号：US10577175

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

IPC分类号： H01L21/304

CPC分类号： H01L21/76254

摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

公开(公告)号：US20050148163A1

公开(公告)日：2005-07-07

申请号：US10975826

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard

IPC分类号： H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.

摘要翻译： 本发明涉及一种薄膜的灾难性转移的方法，包括在源底物中注入在给定深度处的第一种离子或气体和第二种离子或气体，第一种适于产生缺陷，第二种适于产生缺陷，第二种 物种适应于占据这些缺陷。 该方法还包括施加与源基板紧密接触的加强件，在给定温度下对该源基板施加热处理给定时间，以便基本上在给定深度处产生埋入的弱化区域，而没有 引发薄膜的热分裂，以及将一定量的能量（例如机械应力）施加到该源极基底上，以引起薄膜的灾难性分裂，该薄膜具有与该表面相对的基本平坦的面 源基片的表面。

公开(公告)号：US20060284252A1

公开(公告)日：2006-12-21

申请号：US11214590

申请日：2005-08-29

申请人： Alice Boussagol ,  Ian Cayrefourcq

发明人： Alice Boussagol ,  Ian Cayrefourcq

IPC分类号： H01L27/12

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/84 ,  H01L29/7842 ,  H01L29/7843

摘要： The invention relates to structures useful for the manufacture of electronic components, which comprise a substrate, a strain holding layer, and a layer of a strained semiconducting material. These structures are particularly useful where islands are later formed in the strained semiconducting material because the strain holding layer limits relaxation of stress in the islands. This invention also relates to processes for making a these structures.

摘要翻译： 本发明涉及可用于制造电子部件的结构，其包括基底，应变保持层和应变半导体材料层。 由于应变保持层限制岛中的应力松弛，因此在应变半导体材料中稍后形成岛状时，这些结构特别有用。 本发明还涉及制造这些结构的方法。

公开(公告)号：US06838358B2

公开(公告)日：2005-01-04

申请号：US10716900

申请日：2003-11-18

申请人： Thibaut Maurice ,  Ian Cayrefourcq ,  Franck Fournel

发明人： Thibaut Maurice ,  Ian Cayrefourcq ,  Franck Fournel

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

CPC分类号： H01L21/76254

摘要： The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.

摘要翻译： 本发明涉及一种制造晶片的方法，其中异相材料化合物在化合物的预定分离区域分离，并且化合物进行热处理。 本发明的目的是提供一种易于有效地分离异种材料化合物的方法，该方法降低了化合物未定义破裂的风险。 该目的通过一种方法解决，其中热处理包括使化合物退火，其中退火在化合物脱离之前停止，并且化合物与光子的照射以获得化合物在预先确定的位置 分离区

公开(公告)号：US20100044830A1

公开(公告)日：2010-02-25

申请号：US12515484

申请日：2008-01-10

申请人： Ian Cayrefourcq

发明人： Ian Cayrefourcq

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to semiconductor-on-insulator structure and its method of manufacture. This structure includes a substrate, a thin, useful surface layer and an insulating layer positioned between the substrate and surface layer. The insulating layer is at least one dielectric layer of a high k material having a permittivity that is higher than that of silicon dioxide and a capacitance that is substantially equivalent to that of a layer of silicon dioxide having a thickness of less than or equal to 30 nm.

摘要翻译： 本发明涉及绝缘体上半导体结构及其制造方法。 该结构包括基板，薄的有用的表面层和位于基板和表面层之间的绝缘层。 绝缘层是高k材料的至少一个电介质层，介电常数高于二氧化硅的电容率，其电容基本上等于厚度小于或等于30的二氧化硅层的电容 nm。

公开(公告)号：US07572331B2

公开(公告)日：2009-08-11

申请号：US11518366

申请日：2006-09-08

申请人： Konstantin Bourdelle ,  Ian Cayrefourcq ,  Mark Kennard

发明人： Konstantin Bourdelle ,  Ian Cayrefourcq ,  Mark Kennard

IPC分类号： C30B25/18

CPC分类号： H01L21/0262 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532

摘要： The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The present invention provides a method for manufacturing a wafer in which a layer which is lattice-mismatched with the substrate can be grown on the substrate with a high effectiveness and high quality at a low cost. A roughening step is included for roughening the surface of the bulk substrate and a growing step is included for growing the second material on the rough surface with a reduced number of threading dislocations and an enhanced strain relaxation compared to a second material that is epitaxially grown on a polished surface.

摘要翻译： 本发明涉及一种制造晶片的方法，该方法包括第一材料的单晶体体衬底和具有与第一材料的晶格不同的晶格的第二材料的至少一个外延层。 本发明提供了一种制造晶片的方法，其中可以以低成本以高效率和高质量在衬底上生长与衬底晶格失配的层。 包括粗糙化步骤以粗化本体衬底的表面，并且包括生长步骤，用于在粗糙表面上生长第二材料，数量较少的穿透位错和与外延生长的第二材料相比增强的应变松弛 抛光表面。

公开(公告)号：US07078353B2

公开(公告)日：2006-07-18

申请号：US10753173

申请日：2004-01-06

申请人： Nicolas Daval ,  Bruno Ghyselen ,  Cécile Aulnette ,  Oliver Rayssac ,  Ian Cayrefourcq

发明人： Nicolas Daval ,  Bruno Ghyselen ,  Cécile Aulnette ,  Oliver Rayssac ,  Ian Cayrefourcq

IPC分类号： H01L21/31 ,  H01L21/8222 ,  H01L21/326 ,  H01L21/331

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/933

摘要： The invention provides a method of producing a structure of a thin layer of semiconductor material on a support substrate. The thin layer is obtained from a donor substrate and includes an upper layer of semiconductor material. The method includes forming on the upper layer a bonding layer of a material that accepts diffusion from an element of the material of the upper layer, bonding the donor substrate from the side on which the bonding layer is formed on the upper layer to the support substrate, and diffusing the element from the upper layer into the bonding layer to homogenize the concentration of the element in the bonding layer and the upper layer. The result is that the thin layer of the structure is joined by the bonding layer to the upper layer.

摘要翻译： 本发明提供一种在支撑基板上制造半导体材料薄层结构的方法。 薄层从供体基底获得并且包括半导体材料的上层。 该方法包括在上层上形成接受来自上层材料的元素的扩散的材料的接合层，将施主衬底从上层上形成接合层的一侧粘合到支撑衬底上 并且将元件从上层扩散到接合层中以使结合层和上层中的元素的浓度均匀化。 结果是结构的薄层通过粘合层连接到上层。