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11 条记录 (耗时 0.036 秒)

    Method of Manufacturing Semiconductor Memory Device
    6.
    发明申请
    Method of Manufacturing Semiconductor Memory Device 审中-公开
    制造半导体存储器件的方法

    公开(公告)号：US20100184284A1

    公开(公告)日：2010-07-22

    申请号：US12648842

    申请日：2009-12-29

    申请人： Sung Soon Kim

    发明人： Sung Soon Kim

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28052 ,  H01L27/11529 ,  H01L29/40114

    摘要： A method of manufacturing a semiconductor memory device comprises providing a semiconductor substrate, forming gate lines over the semiconductor substrate, wherein each of the gate lines has a stack structure comprising an upper layer having a blocking layer formed on a polysilicon layer, forming a dielectric interlayer between the gate lines such that sides of the polysilicon layers of the gate lines are exposed, forming a metal layer on an entire surface of the dielectric interlayers, the blocking layers, and the polysilicon layers, causing the polysilicon layers in contact with the metal layer to react with the metal layer and undergo a phase change and become silicide layers, and removing the unreacted metal layer.

    摘要翻译： 一种制造半导体存储器件的方法包括提供半导体衬底，在半导体衬底上形成栅极线，其中每个栅极线具有堆叠结构，其包括在多晶硅层上形成有阻挡层的上层，形成介电中间层 在栅极线之间，使得栅极线的多晶硅层的侧面露出，在电介质中间层，阻挡层和多晶硅层的整个表面上形成金属层，使多晶硅层与金属层接触 与金属层反应并发生相变并变成硅化物层，并除去未反应的金属层。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09153475B2

    公开(公告)日：2015-10-06

    申请号：US13599775

    申请日：2012-08-30

    申请人： Woo Duck Jung ,  Sung Soon Kim ,  Ju Il Song

    发明人： Woo Duck Jung ,  Sung Soon Kim ,  Ju Il Song

    IPC分类号： H01L21/764 ,  H01L27/115

    CPC分类号： H01L21/764 ,  H01L27/11534

    摘要： A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.

    摘要翻译： 半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽，并且其中布置多个沟槽的半导体衬底， 沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线，在所述多个栅极线中的每一个之间形成的绝缘层，形成在至少一个栅极线中的第一气隙 所述第一气隙沿所述第一方向延伸，所述第一空气间隙形成在所述绝缘层中的至少一个中，所述第二气隙沿所述第二方向延伸。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130277730A1

    公开(公告)日：2013-10-24

    申请号：US13599775

    申请日：2012-08-30

    申请人： Woo Duck Jung ,  Sung Soon Kim ,  Ju Il Song

    发明人： Woo Duck Jung ,  Sung Soon Kim ,  Ju Il Song

    IPC分类号： H01L29/788 ,  H01L29/06 ,  H01L21/762

    CPC分类号： H01L21/764 ,  H01L27/11534

    摘要： A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.

    摘要翻译： 半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽，并且其中布置多个沟槽的半导体衬底， 沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线，在所述多个栅极线中的每一个之间形成的绝缘层，形成在至少一个栅极线中的第一气隙 所述第一气隙沿所述第一方向延伸，所述第一空气间隙形成在所述绝缘层中的至少一个中，所述第二气隙沿所述第二方向延伸。

    CELL LINE STABLY EXPRESSING MUTATED ONCOPROTEIN E6 AND METHOD OF SCREENING ANTICANCER COMPOUND OF UTERINE CERVICAL CANCER USING THE SAME
    9.
    发明申请
    CELL LINE STABLY EXPRESSING MUTATED ONCOPROTEIN E6 AND METHOD OF SCREENING ANTICANCER COMPOUND OF UTERINE CERVICAL CANCER USING THE SAME 有权
    细胞线稳定表达突变型癌蛋白E6和使用其筛选子宫癌的抗体化合物的方法

    公开(公告)号：US20110081644A1

    公开(公告)日：2011-04-07

    申请号：US12795211

    申请日：2010-06-07

    申请人： Jee Eun Rhee ,  Dae Ho Jang ,  Sung Soon Kim ,  Byeong Sun Choi

    发明人： Jee Eun Rhee ,  Dae Ho Jang ,  Sung Soon Kim ,  Byeong Sun Choi

    IPC分类号： C12Q1/70 ,  C12N5/10

    CPC分类号： G01N33/5011 ,  A61K31/353 ,  A61K33/24

    摘要： Disclosed are a cell line that expresses protein of Seq. No. 1, and a method for screening an anticancer compound of uterine cervical cancer by using the same. The stable cell line that expresses oncoprotein E6 of a human papillomavirus type 16 variant strain is used to determine a difference in amounts of expression of tumor suppressor genes, such as p53, between E6 protein of the reference strain and E6 protein of a variant strain, thereby screening an anticancer compound of uterine cervical cancer, etc. Further, it is possible to develop an anticancer agent of uterine cervical cancer.

    摘要翻译： 公开了表达Seq蛋白的细胞系。 第1号及其使用子宫颈癌抗癌化合物的方法。 表达人乳头瘤病毒16型变体菌株的癌蛋白E6的稳定细胞系用于测定参考菌株的E6蛋白与变体菌株的E6蛋白之间的肿瘤抑制基因（例如p53）的表达量的差异， 从而筛选子宫颈癌的抗癌化合物等。此外，可以开发子宫颈癌的抗癌剂。

    Mutation Implicated in Abnormality of Cardiac Sodium Channel Function
    10.
    发明申请
    Mutation Implicated in Abnormality of Cardiac Sodium Channel Function 审中-公开
    心脏钠通道功能异常的突变

    公开(公告)号：US20100112562A1

    公开(公告)日：2010-05-06

    申请号：US12329540

    申请日：2008-12-05

    申请人： Yang Soo Jang ,  Sung Soon Kim ,  SungJoo Kim Yoon ,  Dong-Jik Shin

    发明人： Yang Soo Jang ,  Sung Soon Kim ,  SungJoo Kim Yoon ,  Dong-Jik Shin

    IPC分类号： C12Q1/68 ,  C07H21/04 ,  C07K14/00 ,  G01N33/53

    CPC分类号： G01N33/6872 ,  C07K14/705 ,  C12Q1/6883 ,  C12Q2600/156 ,  C12Q2600/158 ,  G01N2800/32 ,  Y10T436/143333

    摘要： A novel mutation in the SCN5A gene is associated with loss of cardiac sodium channel function. Analysis of the novel mutation provides an early diagnosis of subjects with cardiac diseases or disorders caused by loss of cardiac sodium channel function, particularly Brugada syndrome. Diagnostic methods include analyzing the sequences of the SCN5A gene or protein of an individual to be tested and comparing them with the sequences of the native, nonvariant SCN5A gene or protein. Pre-symptomatic diagnosis of these syndromes will enable practitioners to treat these disorders using existing medical therapy, e.g., using sodium channel blockers or through electrical stimulation.

    摘要翻译： SCN5A基因中的新突变与心脏钠通道功能丧失有关。 新突变的分析提供了心脏疾病或由心脏钠通道功能丧失引起的疾病，特别是Brugada综合征的受试者的早期诊断。 诊断方法包括分析待测试个体的SCN5A基因或蛋白质的序列，并将其与天然的，非变性的SCN5A基因或蛋白质的序列进行比较。 这些综合征的症状前诊断将使得从业者能够使用现有的药物治疗来治疗这些疾病，例如使用钠通道阻断剂或通过电刺激。