公开(公告)号：US20170271580A1

公开(公告)日：2017-09-21

申请号：US15418250

申请日：2017-01-27

申请人： Il-Mok PARK ,  Dae-Hwan KANG ,  Gwan-Hyeob KOH

发明人： Il-Mok PARK ,  Dae-Hwan KANG ,  Gwan-Hyeob KOH

IPC分类号： H01L45/00 ,  H01L43/10 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L45/06 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2481 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

摘要： Disclosed are a semiconductor memory device and a method of manufacturing the same. A first conductive line extends in a first direction on a substrate and has a plurality of protrusions and recesses that are alternately formed thereon. A second conductive line is arranged over the first conductive line in a second direction such that the first and the second conductive lines cross at the protrusions. A plurality of memory cell structures is positioned on the protrusions of the first conductive line and is contact with the second conductive line. A thermal insulating plug is positioned on the recesses of the first conductive line and reduces heat transfer between a pair of the neighboring cell structures in the first direction. Accordingly, the heat cross talk is reduced between the neighboring cell structures along the conductive line.