公开(公告)号：US07612395B2

公开(公告)日：2009-11-03

申请号：US11441295

申请日：2006-05-24

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L31/113

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/0232

摘要： CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

摘要翻译： 公开了CMOS图像传感器及其制造方法。 公开的CMOS图像传感器包括：半导体衬底; 光电二极管; 位于光电二极管上方的微透镜; 以及位于微透镜上方的滤色器层。

公开(公告)号：US07223953B2

公开(公告)日：2007-05-29

申请号：US10746499

申请日：2003-12-29

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： An image sensor and a method of manufacturing the same are disclosed. When forming an impurity region for a photodiode, the photodiode can be exposed by reducing the impurity region. Thus, a depletion region of the photodiode, formed when the sensor operates, extends to the exposed surface of the photodiode through the inner region of the photodiode, so that it is possible for the photodiode to normally absorb short wavelength light as well as long wavelength light at its depletion region.Also, the uniformity of the generation of photo electrons depending on the different colors of lights can be optimized, and the color presentation quality can be further enhanced.

摘要翻译： 公开了一种图像传感器及其制造方法。 当形成用于光电二极管的杂质区时，可以通过减少杂质区来暴露光电二极管。 因此，当传感器操作时形成的光电二极管的耗尽区域通过光电二极管的内部区域延伸到光电二极管的暴露表面，使得光电二极管可以正常地吸收短波长的光以及长波长 在其耗尽区域发光。 此外，可以优化根据不同颜色的光产生光电子的均匀性，并且可以进一步提高颜色呈现质量。

公开(公告)号：US06982186B2

公开(公告)日：2006-01-03

申请号：US10747302

申请日：2003-12-30

申请人： In Gyun Jeon ,  Kwang Soo Kim ,  Jin Su Han

发明人： In Gyun Jeon ,  Kwang Soo Kim ,  Jin Su Han

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14643

摘要： A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.

摘要翻译： CMOS图像传感器及其制造方法能够防止CMOS图像传感器中的有源区域和场区域之间的界面被离子注入损坏。 该方法包括使用覆盖场区域和源极区域的预定位置的离子注入掩模将掺杂剂离子注入到复位晶体管的栅电极和光电二极管之间的源极区域中。

公开(公告)号：US07510896B2

公开(公告)日：2009-03-31

申请号：US11580387

申请日：2006-10-12

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14609

摘要： Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

摘要翻译： 公开了一种CMOS图像传感器及其制造方法，能够通过增加浮动扩散区域的结电容来改善图像传感器的特性。 CMOS图像传感器通常包括光电二极管和多个晶体管（例如，传输，复位，驱动和选择晶体管），第一导电类型半导体衬底，其具有包括光电二极管区域，浮动扩散区域和 电压输入/输出区域，有源区域上的每个晶体管的栅电极，对应于电压输入/输出区域的半导体衬底中的第一导电类型的第一阱区域，对应于半导体衬底中的第一导电类型第二阱区域 浮动扩散区域和在每个栅电极的相对侧的半导体衬底中的第二导电型扩散区域。

公开(公告)号：US07507597B2

公开(公告)日：2009-03-24

申请号：US11448435

申请日：2006-06-07

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14601

摘要： A method of fabricating a CMOS image sensor is provided. The fabricating method includes: forming a gate electrode with a gate insulating layer interposed at a transistor region of a semiconductor substrate having an active region defined by a photodiode region and a transistor region; forming a first impurity region of a first conductive type at the transistor region of one side of the gate electrode; forming a first sidewall and a second sidewall at both sides of the gate electrode; forming a second impurity region of the first conductive type at the transistor region of the one side of the gate electrode; applying a photoresist layer on the semiconductor substrate, and patterning the photoresist layer to cover the transistor region through an exposing and developing process; forming a third impurity region of a second conductive type at the photodiode region using the patterned photoresist as a mask; selectively removing the first sidewall insulating layer between the second sidewall insulating layer and the gate electrode at a predetermined thickness using the patterned photoresist layer as a mask; covering the gate electrode by reflowing the patterned photoresist layer at a predetermined temperature; selectively removing the second sidewall insulating layer using the reflowed photoresist layer as a mask; and forming a fourth impurity region of the first conductive type at the side of the gate electrode where the third impurity region is formed using the reflowed photoresist layer as a mask.

摘要翻译： 提供一种制造CMOS图像传感器的方法。 制造方法包括：形成栅电极，其栅极绝缘层插入在具有由光电二极管区域和晶体管区域限定的有源区域的半导体衬底的晶体管区域处; 在栅电极的一侧的晶体管区域形成第一导电类型的第一杂质区; 在所述栅电极的两侧形成第一侧壁和第二侧壁; 在栅电极的一侧的晶体管区域形成第一导电类型的第二杂质区; 在半导体衬底上施加光致抗蚀剂层，并通过曝光和显影工艺图案化光致抗蚀剂层以覆盖晶体管区域; 在所述光电二极管区域处使用所述图案化的光致抗蚀剂作为掩模形成第二导电类型的第三杂质区域; 使用图案化的光致抗蚀剂层作为掩模，以预定厚度选择性地去除第二侧壁绝缘层和栅电极之间的第一侧壁绝缘层; 通过在预定温度下回流图案化的光致抗蚀剂层来覆盖栅电极; 使用回流光致抗蚀剂层作为掩模选择性地去除第二侧壁绝缘层; 以及使用回流光致抗蚀剂层作为掩模，在形成有第三杂质区域的栅电极侧形成第一导电类型的第四杂质区。

公开(公告)号：US07491991B2

公开(公告)日：2009-02-17

申请号：US11448426

申请日：2006-06-07

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14689

摘要： A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of a first conductive type at a transistor region at one side of the gate electrode; forming a second impurity region of a first conductive type at a photo diode region at other side of the gate electrode; forming sidewall insulating layers at both sides of the gate electrode; forming a third impurity region of a first conductive type at one side of a gate electrode where the first impurity region is formed; and forming a fourth impurity region of a second conductive type at the gate electrode, the photodiode region and the transistor region by implanting impurity ions of a second conductive type on the entire surface of the semiconductor substrate.

摘要翻译： 提供了一种用于制造CMOS图像传感器的方法。 该方法包括：形成栅电极，其栅极绝缘层插入在具有由二极管和晶体管区域限定的有源区的半导体衬底的晶体管区域上; 在栅极一侧的晶体管区域形成第一导电类型的第一杂质区; 在栅电极的另一侧的光电二极管区域形成第一导电类型的第二杂质区; 在栅电极的两侧形成侧壁绝缘层; 在形成有第一杂质区的栅电极的一侧形成第一导电类型的第三杂质区; 以及通过在半导体衬底的整个表面上注入第二导电类型的杂质离子，在栅电极，光电二极管区域和晶体管区域形成第二导电类型的第四杂质区域。

公开(公告)号：US08421134B2

公开(公告)日：2013-04-16

申请号：US12976851

申请日：2010-12-22

申请人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

发明人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US07687306B2

公开(公告)日：2010-03-30

申请号：US11447424

申请日：2006-06-05

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/761

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insulating layer and a gate electrode thereon; a first source/drain diffusion region in the transistor region at one side of the gate electrode, including a first conductivity type dopant; a second photo diode diffusion region in the region at the other side of the gate electrode, the second diffusion region including a first conductivity type dopant; insulating sidewalls on sides of the gate electrode; and a third diffusion region over or in the second diffusion region, extending below one of the insulating sidewalls (e.g., closest to the photo diode region), and including a second conductivity type dopant.

摘要翻译： 公开了一种CMOS图像传感器及其制造方法。 本CMOS图像传感器包括：包括具有光电二极管区域和晶体管区域的有源区域的半导体衬底; 有源区上的栅极，其上包括栅极绝缘层和栅电极; 在栅极一侧的晶体管区域中的第一源极/漏极扩散区域，包括第一导电型掺杂剂; 在所述栅电极的另一侧的区域中的第二光电二极管扩散区，所述第二扩散区包括第一导电型掺杂剂; 绝缘侧壁在栅电极的侧面; 以及在第二扩散区域之上或之中的第三扩散区域，在绝缘侧壁之一（例如最靠近光电二极管区域）的下方延伸，并且包括第二导电型掺杂剂。

公开(公告)号：US20070069259A1

公开(公告)日：2007-03-29

申请号：US11527396

申请日：2006-09-27

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/1463

摘要： A CMOS image sensor, and method for manufacturing the same is provided. The CMOS image sensor includes a device isolation film formed in a device isolation region of a semiconductor substrate to define an active region and a device isolation region, a gate insulation film formed on the semiconductor substrate. The gate insulation film has different thicknesses at the interface with the device isolation film and an interface with the active region. A gate electrode is formed on the gate insulation film. A floating diffusion region is formed in the semiconductor substrate at one side of the gate electrode. A photodiode region is formed in the semiconductor substrate at the other side of the gate electrode.

摘要翻译： 提供CMOS图像传感器及其制造方法。 CMOS图像传感器包括形成在半导体衬底的器件隔离区域中以限定有源区和器件隔离区的器件隔离膜，形成在半导体衬底上的栅极绝缘膜。 栅极绝缘膜在与器件隔离膜的界面和与有源区的界面处具有不同的厚度。 在栅极绝缘膜上形成栅电极。 在栅电极的一侧的半导体衬底中形成浮动扩散区。 在栅电极的另一侧的半导体衬底中形成光电二极管区域。

公开(公告)号：US07078260B2

公开(公告)日：2006-07-18

申请号：US10970347

申请日：2004-10-21

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/0232

摘要： CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.