利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

1609 records (took 0.024 seconds)

    Photodector including germanium layer and doped region
    1.
    发明授权
    Photodector including germanium layer and doped region 有权

    公开(公告)号：US12087800B2

    公开(公告)日：2024-09-10

    申请号：US17420644

    申请日：2020-01-14

    Applicant: Nippon Telegraph and Telephone Corporation

    Inventor： Kotaro Takeda

    IPC: H01L31/02 ,  G01J1/42 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/024

    CPC classification number: H01L27/14643 ,  G01J1/42 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/024

    Abstract: A problem to be solved is to make plural Ge PDs uniform in sensitivity by heating based on the Ge PDs with heaters photocurrent measurements taken by a current monitor, and thereby curb deterioration in a common-mode rejection ratio. A photodetector according to the present invention is a germanium photodetector (Ge PD) that uses germanium or a germanium compound in a light absorption layer, the photodetector including two or more Ge PDs placed to receive an input differential signal; a current monitor adapted to measure photocurrents of the two or more Ge PDs; resistors adapted to heat the respective Ge PDs; voltage sources connected to the respective resistors and capable of controlling voltage values independently of each other, wherein the voltage sources are connected with the current monitor, and the voltage sources manipulate voltages applied to the heaters such that current values output by the two or more Ge PDs will match each other.

    Detection device and optical filter
    2.
    发明授权
    Detection device and optical filter 有权

    公开(公告)号：US12002280B2

    公开(公告)日：2024-06-04

    申请号：US18237091

    申请日：2023-08-23

    Applicant: Japan Display Inc.

    Inventor： Junko Nagasawa ,  Shigeru Tabatake ,  Tetsuya Yamamoto

    IPC: G06V40/13 ,  G06V40/12 ,  H01L31/0232 ,  H10K39/32

    CPC classification number: G06V40/12 ,  H01L31/0232 ,  H10K39/32

    Abstract: According to an aspect, a detection device includes: a substrate having a detection region; a plurality of photodiodes provided in the detection region; a first light-transmitting resin layer provided so as to cover the photodiodes; a light-blocking layer provided on the upper side of the first light-transmitting resin layer and provided with openings in regions overlapping the respective photodiodes; a second light-transmitting resin layer provided so as to cover the light-blocking layer; and a plurality of lenses provided on the upper side of the second light-transmitting resin layer so as to overlap the respective photodiodes. The second light-transmitting resin layer is provided so as to cover an end on a peripheral side of the light-blocking layer on a peripheral side of the substrate.

    METAL GRID STRUCTURE TO IMPROVE IMAGE SENSOR PERFORMANCE
    4.
    发明公开
    METAL GRID STRUCTURE TO IMPROVE IMAGE SENSOR PERFORMANCE 审中-公开

    公开(公告)号：US20230387148A1

    公开(公告)日：2023-11-30

    申请号：US18360214

    申请日：2023-07-27

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ming Chyi Liu ,  Jiech-Fun Lu

    IPC: H01L27/146 ,  H01L31/0232

    CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/0232

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor comprises a plurality of photodetectors disposed within a substrate. A metal grid layer is disposed over the substrate. The metal grid layer comprises a metal grid structure overlying a central pixel region of the substrate. The metal grid layer continuously extends from the central pixel region to a peripheral pixel region of the substrate that laterally encloses the central pixel region. An upper metal structure is disposed over the metal grid layer. The upper metal structure overlies the peripheral pixel region. The upper metal structure is laterally offset from the metal grid structure. A lower surface of the upper metal structure is disposed vertically over an upper surface of the metal grid structure.

    DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明公开
    DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230378383A1

    公开(公告)日：2023-11-23

    申请号：US18227785

    申请日：2023-07-28

    Applicant: Japan Display Inc.

    Inventor： Kazuki MATSUNAGA ,  Shigesumi ARAKI

    IPC: H01L31/0232 ,  H01L31/10

    CPC classification number: H01L31/0232 ,  H01L31/10

    Abstract: According to an aspect, a detection device includes: a first substrate; a plurality of photodiodes provided on the first substrate; and an optical filter layer including a plurality of light-transmitting regions provided so as to overlap the respective photodiodes, a light-blocking region provided between the light-transmitting regions, and a projection projecting from a surface of the light-blocking region facing the first substrate.

Patent Agency Ranking