公开(公告)号：US20040263065A1

公开(公告)日：2004-12-30

申请号：US10673324

申请日：2003-09-30

Applicant: Industrial Technology Research Institute

Inventor： Yung-Hui Yeh ,  Chi-Lin Chen ,  Yu-Lung Liu ,  Ching-Hsuan Tang ,  Lung-Pin Hsin

IPC: H05B033/00 ,  H05B033/02

CPC classification number: H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5284

Abstract: The present invention discloses an active organic light emitting diode (AOLED) display structure. A color filter and thin film transistor organic light emitting diode (TFT-OLED) are incorporated on one substrate of the AOLED. Moreover, a Indium Tin Oxide(ITO)layer of the AOLED is deposited with a black matrix layer so as to lower light leakage effect and increase the contrast and color purity level in between pixels of the display. By adopting such technology, a flat panel display having large area, high resolution and low product cost is accordingly implemented.

Abstract translation: 本发明公开了一种有源有机发光二极管（AOLED）显示结构。 滤色器和薄膜晶体管有机发光二极管（TFT-OLED）结合在AOLED的一个基板上。 此外，AOLED的氧化铟锡（ITO）层沉积有黑矩阵层，以便降低漏光效应并增加显示器的像素之间的对比度和色纯度水平。 通过采用这种技术，可以实现面积大，分辨率高，产品成本低的平板显示器。

公开(公告)号：US20040253815A1

公开(公告)日：2004-12-16

申请号：US10653080

申请日：2003-09-03

Applicant: Industrial Technology Research Institute

Inventor： Yu-Chang Sun ,  Ching-Hsuan Tang ,  Chi-Shen Lee ,  Chai-Yuan Sheu

IPC: H01L021/00 ,  H01L021/44

CPC classification number: H01L29/66765 ,  H01L21/0272 ,  H01L29/4908 ,  Y10S438/948 ,  Y10S438/952

Abstract: A method for forming a conductive layer is disclosed, which has the following steps. First, a substrate is provided, and then a patterned photoresist layer having an undercut is formed on the substrate. After that, at least one conductive layer is deposited on the substrate. Finally, the patterned photoresist layer is lifted off; wherein the shape of the conductive layer remaining on the substrate is complementary to that of the patterned photoresist layer.

Abstract translation: 公开了形成导电层的方法，其具有以下步骤。 首先，提供衬底，然后在衬底上形成具有底切的图案化光致抗蚀剂层。 之后，在衬底上沉积至少一个导电层。 最后，将图案化的光致抗蚀剂层提起; 其中残留在衬底上的导电层的形状与图案化的光致抗蚀剂层的形状互补。