公开(公告)号：US20240217868A1

公开(公告)日：2024-07-04

申请号：US18090505

申请日：2022-12-29

Applicant: Industrial Technology Research Institute

Inventor： Hao-Wen Cheng ,  Ming-Huei Yen ,  Wen-Jin Li ,  Yu-Ting Guan ,  Ding-Shiang Wang

IPC: C03C15/00 ,  H01L21/3213

CPC classification number: C03C15/00 ,  H01L21/32134

Abstract: A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.