公开(公告)号：US11414776B2

公开(公告)日：2022-08-16

申请号：US16411589

申请日：2019-05-14

Applicant: Industrial Technology Research Institute

Inventor： Shih-Ming Lin ,  Ming-Huei Yen

IPC: H01L21/00 ,  C25F3/12 ,  H01L21/67 ,  C25F7/00 ,  H01L21/3213 ,  H01L21/66

Abstract: An electrochemical processing device includes a current supply unit, a jig, and a controller. The current supply unit provides current for an electrochemical process. The jig includes a clamping region for clamping a substrate, a plurality of processing electrodes disposed in the clamping region and connected to the current supply unit, and a plurality of measuring electrodes disposed in the clamping region. The controller is connected to the plurality of measuring electrodes. When the jig clamps the substrate to perform the electrochemical process, the controller provides a measuring current to the measuring electrode to measure the thickness of the metal layer of the substrate.

公开(公告)号：US20190200459A1

公开(公告)日：2019-06-27

申请号：US15851054

申请日：2017-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ming-Huei Yen

IPC: H05K3/18 ,  H05K1/09 ,  C23C18/16

Abstract: Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

公开(公告)号：US20240217868A1

公开(公告)日：2024-07-04

申请号：US18090505

申请日：2022-12-29

Applicant: Industrial Technology Research Institute

Inventor： Hao-Wen Cheng ,  Ming-Huei Yen ,  Wen-Jin Li ,  Yu-Ting Guan ,  Ding-Shiang Wang

IPC: C03C15/00 ,  H01L21/3213

CPC classification number: C03C15/00 ,  H01L21/32134

Abstract: A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.

公开(公告)号：US20220130751A1

公开(公告)日：2022-04-28

申请号：US17131771

申请日：2020-12-23

Applicant: Industrial Technology Research Institute

Inventor： Ming-Huei Yen ,  Wen-Jin Li ,  Zi-Ting Lin ,  Yu-Ling Chang

IPC: H01L23/498 ,  H01L23/373 ,  B32B15/01 ,  B32B15/20

Abstract: A copper plating structure and a package structure including the same are provided, and the copper plating structure includes at least one first copper layer and at least one second copper layer. The first copper layer includes a (111) crystal plane, wherein a proportion of the (111) crystal plane in each of the first copper layers is 36% to 100%. The second copper layer is located on the first copper layer and includes a non-(111) crystal plane or includes a (111) crystal plane and a non-(111) crystal plane, wherein a proportion of the (111) crystal plane in each of the second copper layers is 0% to 57%.

公开(公告)号：US10750619B2

公开(公告)日：2020-08-18

申请号：US15851054

申请日：2017-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ming-Huei Yen

IPC: H05K1/09 ,  H05K3/18 ,  C23C18/16 ,  C23C18/18 ,  H01L23/532 ,  H01L21/768 ,  H01L21/288 ,  H01L21/48 ,  H01L23/498 ,  C23C18/20

Abstract: Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.