公开(公告)号：US20240153832A1

公开(公告)日：2024-05-09

申请号：US18386383

申请日：2023-11-02

Applicant: Infineon Technologies AG

Inventor： Markus Stein ,  Alexander Schmer

IPC: H01L23/053 ,  H01L21/50 ,  H01L25/07

CPC classification number: H01L23/053 ,  H01L21/50 ,  H01L25/072 ,  H01L24/29

Abstract: A power semiconductor module arrangement includes a housing, a substrate forming a ground surface of the housing, one or more holding pins mechanically connected to the substrate, and one or more holding elements attached or integrally formed with the housing, wherein a first end of each of the one or more holding pins is arranged inside the housing and connected to the substrate, each of the one or more holding elements includes a sleeve configured to receive a free end of one of the holding pins, and each of the one or more holding pins extends from the substrate in a vertical direction perpendicular to a top surface of the substrate towards a different one of the one or more holding elements such that the free end of each of the one or more holding pins is arranged inside the respective holding element in order to form a force-fitting connection.

公开(公告)号：US20240420968A1

公开(公告)日：2024-12-19

申请号：US18738124

申请日：2024-06-10

Applicant: Infineon Technologies AG

Inventor： Alexander Schmer ,  Anita Herzer ,  Hans Hartung ,  Martin Goldammer

IPC: H01L21/56 ,  H01L23/02 ,  H01L23/31 ,  H01L25/07

Abstract: A method for forming a power semiconductor module arrangement includes: arranging a housing on a substrate, the housing having sidewalls and being arranged to directly adjoin the substrate such that the substrate forms a ground surface of the housing; filling a liquid, viscous or semi-liquid UV-curable potting material into the housing so as to cover the substrate with the potting material; irradiating a first portion of the potting material in areas of the potting material near an interface between the substrate and the sidewalls so as to seal any gaps between the substrate and the sidewalls; and irradiating a second portion of the potting material farther away from the interface between the substrate and the sidewalls than the first portion of the potting material to form an encapsulant. Irradiation of the first and second portions of the potting material takes place at different times and/or via different radiation sources.

公开(公告)号：US20240162099A1

公开(公告)日：2024-05-16

申请号：US18504463

申请日：2023-11-08

Applicant: Infineon Technologies AG

Inventor： Alexander Schmer ,  Markus Stein

IPC: H01L23/053 ,  H01L21/48

CPC classification number: H01L23/053 ,  H01L21/4817

Abstract: A power semiconductor module arrangement includes: a housing having a plurality of through holes; a substrate forming a ground surface of the housing; and a plurality of terminal elements mechanically and electrically connected to the substrate. A first end of each terminal element is arranged inside the housing and connected to the substrate. Each terminal element extends from the substrate in a vertical direction perpendicular to a top surface of the substrate through one of the through holes to the outside of the housing, such that a second end of each terminal element is arranged outside of the housing. Each terminal element includes a holding element arranged between the first end and the second end. Each holding element exerts a force on the housing, thereby holding the housing in a desired position with regard to the substrate.