公开(公告)号：US20200013859A1

公开(公告)日：2020-01-09

申请号：US16502451

申请日：2019-07-03

Applicant: Infineon Technologies AG

Inventor： Carsten SCHAEFFER ,  Alexander Breymesser ,  Bernhand Goller ,  Ronny Kern ,  Matteo Piccin ,  Roland Rupp ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/784 ,  H01L21/683 ,  H01L29/66

Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.