公开(公告)号：US11804432B2

公开(公告)日：2023-10-31

申请号：US17173863

申请日：2021-02-11

申请人： Infineon Technologies AG

发明人： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/528 ,  H01L21/76825 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/00 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

公开(公告)号：US20220254713A1

公开(公告)日：2022-08-11

申请号：US17173863

申请日：2021-02-11

申请人： Infineon Technologies AG

发明人： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L21/768

摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.