公开(公告)号：US20150064890A1

公开(公告)日：2015-03-05

申请号：US14011832

申请日：2013-08-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Fritz Kroener ,  Werner Schustereder

IPC: H01L21/265

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Abstract translation: 公开了一种制造半导体的方法，该方法具有：提供具有第一面和第二面的半导体本体; 通过所述半导体本体中的所述第一侧至所述半导体本体的第一深度位置的第一注入而在所述半导体本体中形成n掺杂区; 以及通过所述半导体本体中的所述第二侧到所述半导体本体的第二深度位置的第二注入在所述半导体本体中形成p掺杂区，在所述n掺杂区和所述p掺杂区之间形成pn结 在半导体体内。