公开(公告)号：US20230071209A1

公开(公告)日：2023-03-09

申请号：US17823397

申请日：2022-08-30

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHAEUSSER

IPC: H01L31/102 ,  G01S7/481 ,  G01S17/32 ,  G01S7/4915 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

Abstract: A time of flight sensor includes at least one pixel, including: an epitaxially-grown Ge-based photosensitive structure including an upper portion and a trunk portion, a Si-based photocurrent collecting structure, a dielectric material layer arranged at least between the upper portion of the photosensitive structure and the photocurrent collecting structure, wherein the trunk portion of the photosensitive structure is arranged within an aperture in the dielectric material layer, and at least one n-contact configured to collect electrons of a photocurrent and at least one p-contact configured to collect holes of the photocurrent, the at least one n-contact and p-contact arranged in the photocurrent collecting structure.

公开(公告)号：US20230411859A1

公开(公告)日：2023-12-21

申请号：US18325679

申请日：2023-05-30

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN

IPC: H01Q13/02 ,  H01Q13/06

CPC classification number: H01Q13/0233 ,  H01Q13/06

Abstract: An image sensor for sensing infrared light includes at least one pixel, including: a horn antenna structure including a first side, a second side and one or more lateral sides connecting the first side and the second side, wherein the first side faces incoming light and wherein a surface area of the second side is smaller than a surface area of the first side, a waveguide structure arranged at the second side of the horn antenna structure, and a Ge-based photosensitive structure configured to absorb infrared light and generate a photocurrent in response, wherein the horn antenna structure and the waveguide structure are configured to direct incoming infrared light onto the photosensitive structure.

公开(公告)号：US20230350032A1

公开(公告)日：2023-11-02

申请号：US18298836

申请日：2023-04-11

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHÄUßER

IPC: G01S7/4914 ,  G01S7/481 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18

CPC classification number: G01S7/4914 ,  G01S7/4816 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1812

Abstract: A time-of-flight sensor includes at least one pixel, including: a Si-based photocurrent collecting structure and a Ge-based photosensitive structure epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure includes an n-doped region and a p-doped region, wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact and wherein the conduction band in the p-doped region includes a barrier for the electrons of the photocurrent and the valence band in the n-doped region includes a barrier for the holes of the photocurrent.