公开(公告)号：US20230350032A1

公开(公告)日：2023-11-02

申请号：US18298836

申请日：2023-04-11

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHÄUßER

IPC: G01S7/4914 ,  G01S7/481 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18

CPC classification number: G01S7/4914 ,  G01S7/4816 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1812

Abstract: A time-of-flight sensor includes at least one pixel, including: a Si-based photocurrent collecting structure and a Ge-based photosensitive structure epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure includes an n-doped region and a p-doped region, wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact and wherein the conduction band in the p-doped region includes a barrier for the electrons of the photocurrent and the valence band in the n-doped region includes a barrier for the holes of the photocurrent.

公开(公告)号：US20230071209A1

公开(公告)日：2023-03-09

申请号：US17823397

申请日：2022-08-30

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHAEUSSER

IPC: H01L31/102 ,  G01S7/481 ,  G01S17/32 ,  G01S7/4915 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

Abstract: A time of flight sensor includes at least one pixel, including: an epitaxially-grown Ge-based photosensitive structure including an upper portion and a trunk portion, a Si-based photocurrent collecting structure, a dielectric material layer arranged at least between the upper portion of the photosensitive structure and the photocurrent collecting structure, wherein the trunk portion of the photosensitive structure is arranged within an aperture in the dielectric material layer, and at least one n-contact configured to collect electrons of a photocurrent and at least one p-contact configured to collect holes of the photocurrent, the at least one n-contact and p-contact arranged in the photocurrent collecting structure.