公开(公告)号：US20230350032A1

公开(公告)日：2023-11-02

申请号：US18298836

申请日：2023-04-11

Applicant: Infineon Technologies AG

Inventor： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHÄUßER

IPC: G01S7/4914 ,  G01S7/481 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18

CPC classification number: G01S7/4914 ,  G01S7/4816 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1812

Abstract: A time-of-flight sensor includes at least one pixel, including: a Si-based photocurrent collecting structure and a Ge-based photosensitive structure epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure includes an n-doped region and a p-doped region, wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact and wherein the conduction band in the p-doped region includes a barrier for the electrons of the photocurrent and the valence band in the n-doped region includes a barrier for the holes of the photocurrent.