公开(公告)号：US20250015148A1

公开(公告)日：2025-01-09

申请号：US18764822

申请日：2024-07-05

Applicant: Infineon Technologies AG

Inventor： Thomas AICHINGER ,  Wolfgang BERGNER ,  Hans WEBER ,  Michael HELL ,  Armin TILKE ,  Grazvydas ZIEMYS

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A transistor device and a method for manufacturing a transistor device are disclosed. The transistor device includes a semiconductor body and a plurality of transistor cells. Each transistor cell includes: a drift region, a body region, and a source region; a gate electrode connected to a gate node; and a field electrode connected to a source node. The gate electrode is dielectrically insulated from the body region by a gate dielectric, and is arranged in a first trench extending from a first surface into the semiconductor body. The field electrode is dielectrically insulated from the drift region by a high-k dielectric, and is arranged in a second trench. The second trench extends from the first surface into the semiconductor body and is spaced apart from the first trench, and the field electrode extends at least as deep as the first trench into the semiconductor body.