公开(公告)号：US20250015148A1

公开(公告)日：2025-01-09

申请号：US18764822

申请日：2024-07-05

Applicant: Infineon Technologies AG

Inventor： Thomas AICHINGER ,  Wolfgang BERGNER ,  Hans WEBER ,  Michael HELL ,  Armin TILKE ,  Grazvydas ZIEMYS

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A transistor device and a method for manufacturing a transistor device are disclosed. The transistor device includes a semiconductor body and a plurality of transistor cells. Each transistor cell includes: a drift region, a body region, and a source region; a gate electrode connected to a gate node; and a field electrode connected to a source node. The gate electrode is dielectrically insulated from the body region by a gate dielectric, and is arranged in a first trench extending from a first surface into the semiconductor body. The field electrode is dielectrically insulated from the drift region by a high-k dielectric, and is arranged in a second trench. The second trench extends from the first surface into the semiconductor body and is spaced apart from the first trench, and the field electrode extends at least as deep as the first trench into the semiconductor body.

公开(公告)号：US20250006814A1

公开(公告)日：2025-01-02

申请号：US18756389

申请日：2024-06-27

Applicant: Infineon Technologies AG

Inventor： Wolfgang LEHNERT ,  Fabian RASINGER ,  Thomas AICHINGER ,  Gerald RESCHER ,  Francisco Javier SANTOS RODRIGUEZ ,  Carsten SCHAEFFER ,  Armin TILKE

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/16 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78

Abstract: A method for forming an interface layer on a silicon carbide body comprises removing an oxide layer from a surface of a silicon carbide body to obtain a silicon carbide surface. The silicon carbide body comprises a source region of a first conductivity type and a body region of a second conductivity type. The method further comprises after removing the oxide layer, depositing an interface layer directly on the silicon carbide surface. The interface layer has a thickness of less or equal to 15 nm. The method further comprises forming an electrical insulator over the interface layer, and forming a gate electrode over the electrical insulator.

公开(公告)号：US20240405092A1

公开(公告)日：2024-12-05

申请号：US18664904

申请日：2024-05-15

Applicant: Infineon Technologies AG

Inventor： Armin TILKE ,  Sandra KRAUSE ,  Thomas AICHINGER ,  Wolfgang LEHNERT ,  Francisco Javier SANTOS RODRIGUEZ

IPC: H01L29/51 ,  H01L29/16 ,  H01L29/423

Abstract: There is described a semiconductor device comprising an SiC body with a gate structure comprising a gate dielectric with a specific multilayer laminate structure including alternating layers of a first dielectric material and of a second dielectric material having a dielectric constant of 4 or higher. There is further described a method for manufacturing such a semiconductor device including an SiC body as mentioned before.