公开(公告)号：US20230163167A1

公开(公告)日：2023-05-25

申请号：US17990142

申请日：2022-11-18

申请人： Infineon Technologies AG

发明人： Michael HELL ,  Thomas Aichinger ,  Rudolf Elpelt ,  Caspar Leendertz

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

CPC分类号： H01L29/063 ,  H01L29/1608 ,  H01L29/1095 ,  H01L29/7813 ,  H01L21/0465 ,  H01L21/047 ,  H01L29/66068

摘要： A semiconductor device is provided. In an example, the semiconductor device includes a trench gate structure in a silicon carbide (SiC) semiconductor body. The semiconductor device includes a source region of a first conductivity type that adjoins the trench gate structure in a first segment. The semiconductor device includes a semiconductor region of a second conductivity type. The semiconductor region includes a first sub-region arranged below the source region in the first segment, and a second sub-region arranged in a second segment that adjoins the first segment. The semiconductor device includes a current spread region of the first conductivity type. The current spread region includes a first sub-region that adjoins the trench gate structure in the first segment at a vertical distance to a first surface of the SiC semiconductor body, and a second sub-region that is spaced from the trench gate structure in the second segment at the vertical distance to the first surface by a lateral distance.

公开(公告)号：US20240145247A1

公开(公告)日：2024-05-02

申请号：US18407587

申请日：2024-01-09

申请人： Infineon Technologies AG

发明人： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC分类号： H01L21/265 ,  H01J37/317 ,  H01L21/04 ,  H01L29/36

CPC分类号： H01L21/26586 ,  H01J37/3171 ,  H01L21/046 ,  H01L21/047 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/36 ,  H01J2237/24578 ,  H01J2237/31703

摘要： In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US20210193435A1

公开(公告)日：2021-06-24

申请号：US17127309

申请日：2020-12-18

申请人： Infineon Technologies AG

发明人： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC分类号： H01J37/317 ,  H01L21/265

摘要： In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.