公开(公告)号：US20130278323A1

公开(公告)日：2013-10-24

申请号：US13918319

申请日：2013-06-14

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC: H03K17/16

CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract translation: 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

公开(公告)号：US09246483B2

公开(公告)日：2016-01-26

申请号：US13918319

申请日：2013-06-14

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC: H03K17/687 ,  H03K17/16

CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract translation: 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

公开(公告)号：US20160241140A1

公开(公告)日：2016-08-18

申请号：US15136350

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC: H02M3/07 ,  H03K17/687

CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.