公开(公告)号：US20210119003A1

公开(公告)日：2021-04-22

申请号：US17066954

申请日：2020-10-09

Applicant: Infineon Technologies AG

Inventor： Vera Van Treek ,  Roman Baburske ,  Christian Jaeger ,  Christian Robert Mueller ,  Franz-Josef Niedernostheide ,  Frank Dieter Pfirsch ,  Alexander Philippou ,  Judith Specht

IPC: H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L23/00 ,  H01L29/739

Abstract: A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.

公开(公告)号：US11257914B2

公开(公告)日：2022-02-22

申请号：US17066954

申请日：2020-10-09

Applicant: Infineon Technologies AG

Inventor： Vera Van Treek ,  Roman Baburske ,  Christian Jaeger ,  Christian Robert Mueller ,  Franz-Josef Niedernostheide ,  Frank Dieter Pfirsch ,  Alexander Philippou ,  Judith Specht

IPC: H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L23/00 ,  H01L29/739

Abstract: A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.