公开(公告)号：US20220406947A1

公开(公告)日：2022-12-22

申请号：US17838339

申请日：2022-06-13

Applicant: Infineon Technologies AG

Inventor： Benedikt Stoib ,  Moriz Jelinek ,  Marten Mueller ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Holger Schulze

IPC: H01L29/861 ,  H01L29/36 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66

Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type adjacent the first region at the second surface; a field stop region of the first conductivity type between the drift region and second surface; and a first electrode on the second surface directly adjacent to the first region in a first part of the second surface and to the second region in a second part of the second surface. The field stop region includes first and second sub-regions. Over a predominant portion of the first part of the second surface, the second sub-region directly adjoins the first region and includes dopants of the second conductivity type that partially compensate dopants of the first conductivity type.