公开(公告)号：US20240230797A9

公开(公告)日：2024-07-11

申请号：US18487593

申请日：2023-10-16

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Armin SATZ ,  Wolfgang RABERG ,  Klemens PRÜGL ,  Mathias KLAEUI

IPC: G01R33/09 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/098 ,  H01F10/3268 ,  H10N50/01 ,  H10N50/10

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

公开(公告)号：US20240133982A1

公开(公告)日：2024-04-25

申请号：US18487593

申请日：2023-10-15

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Armin SATZ ,  Wolfgang RABERG ,  Klemens PRÜGL ,  Mathias KLAEUI

IPC: G01R33/09 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/098 ,  H01F10/3268 ,  H10N50/01 ,  H10N50/10

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

公开(公告)号：US20230026375A1

公开(公告)日：2023-01-26

申请号：US17864810

申请日：2022-07-14

Applicant: Infineon Technologies AG

Inventor： Mathias KLAEUI ,  Udo AUSSERLECHNER ,  Johannes GUETTINGER ,  Armin SATZ ,  Juergen ZIMMER

IPC: G01R33/07 ,  H01F10/32 ,  G01R33/09

Abstract: An apparatus for generating magnetic vortex spin structures includes a device for moving at least one magnetic domain wall in a magnetic domain wall channel structure; and a device for generating and storing at least one magnetic vortex spin structure in response to the magnetic domain wall moved in the domain wall channel structure.