公开(公告)号：US20210311139A1

公开(公告)日：2021-10-07

申请号：US17220129

申请日：2021-04-01

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Udo AUSSERLECHNER ,  Armin SATZ

IPC: G01R33/07 ,  H01L43/02 ,  H01F10/32

Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.

公开(公告)号：US20250076419A1

公开(公告)日：2025-03-06

申请号：US18948933

申请日：2024-11-15

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Udo AUSSERLECHNER ,  Armin SATZ

IPC: G01R33/07 ,  G01R33/09 ,  G11C11/16 ,  H01F10/32 ,  H10N50/80

Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.

公开(公告)号：US20250044376A1

公开(公告)日：2025-02-06

申请号：US18771305

申请日：2024-07-12

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Johannes GUETTINGER ,  Armin SATZ ,  Sebastian ZEILINGER

IPC: G01R33/00 ,  G01R33/02 ,  G01R33/07

Abstract: The present disclosure relates to an anomalous Hall sensor, including a Hall cross. The Hall cross includes a layer stack including a ferromagnetic layer. A first arm of the Hall cross formed in the layer stack extends in a first direction. A second arm of the Hall cross formed in the layer stack extends in a second direction perpendicular to the first direction. The anomalous Hall sensor includes a control circuit configured to apply current through the first arm and measure voltage across the second arm, and apply current through the second arm and measure voltage across the first arm. The anomalous Hall sensor further includes a processor configured to compute a component of an external magnetic field in a third direction perpendicular to the first and the second direction based on a combination of the measured voltages.

公开(公告)号：US20240310190A1

公开(公告)日：2024-09-19

申请号：US18602584

申请日：2024-03-12

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Johannes GUETTINGER ,  Armin SATZ

IPC: G01D5/16 ,  H10N50/01 ,  H10N50/10

CPC classification number: G01D5/16 ,  H10N50/01 ,  H10N50/10

Abstract: A device includes a magnetic layer and a guiding structure arranged over the magnetic layer and configured to sequentially transfer a skyrmion in the magnetic layer along a transfer pattern in response to a rotating magnetic field. The device further includes a plurality of magnetoresistive elements arranged along the transfer pattern and configured to detect a position of the skyrmion in the transfer pattern. The device is configured to determine a number of rotations of the rotating magnetic field based on the detected position of the skyrmion in the transfer pattern.

公开(公告)号：US20240230797A9

公开(公告)日：2024-07-11

申请号：US18487593

申请日：2023-10-16

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Armin SATZ ,  Wolfgang RABERG ,  Klemens PRÜGL ,  Mathias KLAEUI

IPC: G01R33/09 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/098 ,  H01F10/3268 ,  H10N50/01 ,  H10N50/10

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

公开(公告)号：US20240133982A1

公开(公告)日：2024-04-25

申请号：US18487593

申请日：2023-10-15

Applicant: Infineon Technologies AG

Inventor： Dieter SUESS ,  Armin SATZ ,  Wolfgang RABERG ,  Klemens PRÜGL ,  Mathias KLAEUI

IPC: G01R33/09 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/098 ,  H01F10/3268 ,  H10N50/01 ,  H10N50/10

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

公开(公告)号：US20170227613A1

公开(公告)日：2017-08-10

申请号：US15375995

申请日：2016-12-12

Applicant: Infineon Technologies AG

Inventor： Anton BACHLEITNER HOFMANN ,  Hubert BRUECKL ,  Klemens PRUEGL ,  Wolfgang RABERG ,  Armin SATZ ,  Dieter SUESS ,  Tobias WURFT

IPC: G01R33/00 ,  H01L43/08 ,  G01R33/09 ,  H01L43/02

CPC classification number: G01R33/0017 ,  G01R33/091 ,  H01L43/02 ,  H01L43/08

Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.