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公开(公告)号：US20240310190A1
公开(公告)日：2024-09-19
申请号：US18602584
申请日：2024-03-12
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Johannes GUETTINGER , Armin SATZ
Abstract: A device includes a magnetic layer and a guiding structure arranged over the magnetic layer and configured to sequentially transfer a skyrmion in the magnetic layer along a transfer pattern in response to a rotating magnetic field. The device further includes a plurality of magnetoresistive elements arranged along the transfer pattern and configured to detect a position of the skyrmion in the transfer pattern. The device is configured to determine a number of rotations of the rotating magnetic field based on the detected position of the skyrmion in the transfer pattern.
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公开(公告)号：US20250155528A1
公开(公告)日：2025-05-15
申请号：US18510084
申请日：2023-11-15
Applicant: Infineon Technologies AG
Inventor： Dan Ioan Dumitru STOICA , Ilie-Ionut CRISTEA , Armin SATZ , Georg KAFFL
Abstract: A magnetic field sensor chip includes an input terminal configured to receive an external bias current from an external current source; an internal current generator configured to split the external bias current into a plurality of internal bias currents, including a first internal bias current and a second internal bias current; a Hall sensor configured to be biased by the first internal bias current and set at a first operating point based on the first internal bias current, wherein the Hall sensor is further configured to generate a sensor signal based on a magnetic field and the first operating point; and an amplifier configured to be biased by the second internal bias current and set at a second operating point based on the second internal bias current. The amplifier is configured to amplify the sensor signal into an amplified sensor signal based on the second operating point.
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公开(公告)号：US20210255255A1
公开(公告)日：2021-08-19
申请号：US17246820
申请日：2021-05-03
Applicant: Infineon Technologies AG
Inventor： Dirk HAMMERSCHMIDT , Armin SATZ , Juergen ZIMMER
Abstract: A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.
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公开(公告)号：US20190234767A1
公开(公告)日：2019-08-01
申请号：US15882437
申请日：2018-01-29
Applicant: Infineon Technologies AG
Inventor： Gernot BINDER , Armin SATZ
IPC: G01D5/22
Abstract: A sensor module may include a magnet with a magnetization in a first direction, and a sensor chip including a first sensing element and a second sensing element arranged on a plane defined by the sensor chip. The first direction may be substantially parallel to the main surface of the sensor chip. The first sensing element and the second sensing element may be sensitive to an in-plane component of a magnetic field along the first direction or may be sensitive to an in-plane component of the magnetic field perpendicular to the first direction. The first sensing element and the second sensing element may be positioned beyond an edge of the magnet along the first direction such that the first sensing element and the second sensing element protrude past the edge of the magnet along the first direction.
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公开(公告)号：US20250076419A1
公开(公告)日：2025-03-06
申请号：US18948933
申请日：2024-11-15
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Udo AUSSERLECHNER , Armin SATZ
Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.
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Patent Agency Ranking
公开(公告)号：US20250044376A1
公开(公告)日：2025-02-06
申请号：US18771305
申请日：2024-07-12
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Johannes GUETTINGER , Armin SATZ , Sebastian ZEILINGER
Abstract: The present disclosure relates to an anomalous Hall sensor, including a Hall cross. The Hall cross includes a layer stack including a ferromagnetic layer. A first arm of the Hall cross formed in the layer stack extends in a first direction. A second arm of the Hall cross formed in the layer stack extends in a second direction perpendicular to the first direction. The anomalous Hall sensor includes a control circuit configured to apply current through the first arm and measure voltage across the second arm, and apply current through the second arm and measure voltage across the first arm. The anomalous Hall sensor further includes a processor configured to compute a component of an external magnetic field in a third direction perpendicular to the first and the second direction based on a combination of the measured voltages.
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公开(公告)号：US20240318948A1
公开(公告)日：2024-09-26
申请号：US18735723
申请日：2024-06-06
Applicant: Infineon Technologies AG
Inventor： Joo Il PARK , Gernot BINDER , Dirk HAMMERSCHMIDT , Christoph OSWALD , Armin SATZ
Abstract: An absolute position measurement system includes a multipole magnet comprising alternating magnetic poles extending along a multipole extension direction, the alternating magnetic poles generating a magnetic field. A magnetic sensor includes a first sensor element arrangement configured to generate a first signal in response to a first magnetic field component and a second sensor element arrangement configured to generate a second signal in response to a second magnetic field component. The absolute position measurement system is configured, as a position of the magnetic sensor relative to the multipole magnet changes, to generate a first oscillating sensor signal with decreasing first signal amplitude and to generate a second oscillating sensor signal with decreasing second signal amplitude based on the first and second signals. A processing circuit is configured to calculate an absolute position of the magnetic sensor based on the first oscillating sensor signal and the second oscillating sensor signal.
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公开(公告)号：US20210131827A1
公开(公告)日：2021-05-06
申请号：US17064944
申请日：2020-10-07
Applicant: Infineon Technologies AG
Inventor： Armin SATZ , Gernot BINDER
Abstract: An angle sensor for detecting a rotation angle of a shaft, on the axial end of which a permanent magnet is fitted. The permanent magnet has a north pole and a south pole that lie opposite one another across a rotation axis of the shaft. A sensor arrangement includes at least four sensor elements that are arranged with equidistant angles between them on a sensor element circle. The ferromagnetic element is arranged concentrically with a center of the sensor element circle and, when viewed in the direction of the midaxis of the sensor element circle, is point-symmetrical with respect to the center. The angle sensor is arranged relative to the axial end of the shaft such that the rotation axis of the shaft is substantially concentric with the center of the sensor element circle and the sensor arrangement is arranged between the permanent magnet and the ferromagnetic element.
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9.发明公开公开(公告)号：US20240151786A1
公开(公告)日：2024-05-09
申请号：US18504527
申请日：2023-11-08
Applicant: Infineon Technologies AG
Inventor： Armin SATZ , Juergen ZIMMER
CPC classification number: G01R33/098 , G01R33/0005 , G01R33/0023 , G01R33/093 , H10N50/10
Abstract: Disclosed herein is a magnetoresistive magnetic field sensor which, inter alia, includes four magnetoresistive elements arranged in a Wheatstone full bridge circuit. A first magnetoresistive element and a second magnetoresistive element, which respectively have an inverse behavior in relation to a change in conductance, are arranged in a first half bridge. A third magnetoresistive element and a fourth magnetoresistive element, which respectively have an inverse behavior in relation to a change in conductance, are arranged in a second half bridge. At least two of the four magnetoresistive elements have different conductance values when no external magnetic field is present. In each case, two of the four magnetoresistive elements have the same conductance if an external magnetic field with a predefined magnetic field strength is present.
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公开(公告)号：US20210311139A1
公开(公告)日：2021-10-07
申请号：US17220129
申请日：2021-04-01
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Udo AUSSERLECHNER , Armin SATZ
Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.
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