公开(公告)号：US11043384B2

公开(公告)日：2021-06-22

申请号：US16432211

申请日：2019-06-05

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Kokot ,  Christian Krueger ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/04 ,  H01L21/265 ,  H01L21/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L21/687

Abstract: A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.

公开(公告)号：US20190385852A1

公开(公告)日：2019-12-19

申请号：US16432211

申请日：2019-06-05

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Kokot ,  Christian Krueger ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/66 ,  H01L21/687 ,  H01L29/10 ,  H01L29/36 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.