公开(公告)号：US20160126165A1

公开(公告)日：2016-05-05

申请号：US14927561

申请日：2015-10-30

Applicant: Infineon Technologies AG

Inventor： Paul FRANK ,  Alexander HEINRICH ,  Michael JUERSS ,  Chiong Yong TAY

IPC: H01L23/495 ,  H01L21/78 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/49513 ,  H01L21/4825 ,  H01L23/488 ,  H01L24/32 ,  H01L24/83 ,  H01L29/0657 ,  H01L2224/2929 ,  H01L2224/3207 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/32502 ,  H01L2224/83065 ,  H01L2224/83192 ,  H01L2924/014

Abstract: A method of connecting a substrate is provided, wherein the substrate may include a first main surface and a second main surface opposite the first main surface. The method may include forming at least one protrusion on the first main surface of the substrate, forming a fixing agent over the first main surface of the substrate and over the at least one protrusion; and arranging the substrate on a carrier. The at least one protrusion may contact a surface of the carrier and may be configured to keep the first main surface of the substrate at a distance to the contacted surface of the carrier corresponding to a height of the protrusion, thereby forming a space between the first main surface of the substrate and the carrier. During the arranging the substrate on the carrier, at least a part of the fixing agent formed over the at least one protrusion may be displaced into the space between the first main surface of the substrate and the carrier.

Abstract translation: 提供了一种连接衬底的方法，其中衬底可以包括第一主表面和与第一主表面相对的第二主表面。 该方法可以包括在基板的第一主表面上形成至少一个突起，在基板的第一主表面上并在该至少一个突起上方形成固定剂; 并将衬底布置在载体上。 所述至少一个突起可以接触所述载体的表面，并且可以被配置为将所述基板的所述第一主表面保持在与所述突起的高度相对应的所述载体的接触表面一定距离处，从而在所述第一 基板和载体的主表面。 在将衬底布置在载体上时，形成在至少一个突起上的固定剂的至少一部分可以位移到衬底的第一主表面和载体之间的空间中。

公开(公告)号：US20210242034A1

公开(公告)日：2021-08-05

申请号：US17167620

申请日：2021-02-04

Applicant: Infineon Technologies AG

Inventor： Frederik OTTO ,  Paul FRANK

IPC: H01L21/324 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31

Abstract: An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.