公开(公告)号：US20200283286A1

公开(公告)日：2020-09-10

申请号：US16291412

申请日：2019-03-04

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH ,  Sebastian LUBER ,  Roland MEIER ,  Bernhard WINKLER

IPC: B81B3/00 ,  B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.