公开(公告)号：US20190300362A1

公开(公告)日：2019-10-03

申请号：US16447036

申请日：2019-06-20

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Manfred FRIES ,  Franz-Peter KALZ

IPC: B81C1/00 ,  H01L23/10 ,  B81B7/00 ,  H01L21/50 ,  H01L23/04

Abstract: A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

公开(公告)号：US20240357947A1

公开(公告)日：2024-10-24

申请号：US18635621

申请日：2024-04-15

Applicant: Infineon Technologies AG

Inventor： Jochen BRAUMÜLLER ,  Florian BRANDL ,  Michael KIRSCH ,  Wolfgang RABERG ,  Nicolas ARLT ,  Jash BANKER ,  Patrick HANEKAMP

IPC: H10N60/85 ,  G06N10/40 ,  H10N60/80

CPC classification number: H10N60/85 ,  G06N10/40 ,  H10N60/805

Abstract: An electronic circuit includes a substrate and a superconducting electronic circuit unit which is constructed on the substrate. The superconducting electronic circuit unit includes a capacitor with parallel plates opposite one another and a crystalline capacitor dielectric arranged between the parallel plates.

公开(公告)号：US20210363001A1

公开(公告)日：2021-11-25

申请号：US17321897

申请日：2021-05-17

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL

IPC: B81B3/00 ,  B81C1/00

Abstract: A microelectromechanical system (MEMS) device contains a movable MEMS structure, a first support structure in which an edge of the MEMS structure is attached, a cavity which is bounded by the MEMS structure and the first support structure, and a second support structure which is attached in the cavity and at the edge of the MEMS structure and is configured so as to support the edge of the MEMS structure mechanically.

公开(公告)号：US20200346922A1

公开(公告)日：2020-11-05

申请号：US16929376

申请日：2020-07-15

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH

IPC: B81B7/00

Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.

公开(公告)号：US20230102575A1

公开(公告)日：2023-03-30

申请号：US17934057

申请日：2022-09-21

Applicant: Infineon Technologies AG

Inventor： Daniel KÖHLER ,  Vlad BUICULESCU ,  Florian BRANDL ,  Dirk MEINHOLD ,  Erhard LANDGRAF ,  Rainer Markus SCHALLER ,  Markus ECKINGER

IPC: G01L19/00 ,  G01P1/00 ,  G01P15/08 ,  B60L58/10

Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.

公开(公告)号：US20210032097A1

公开(公告)日：2021-02-04

申请号：US17076250

申请日：2020-10-21

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200317508A1

公开(公告)日：2020-10-08

申请号：US16373938

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH

IPC: B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.

公开(公告)号：US20210148776A1

公开(公告)日：2021-05-20

申请号：US17159492

申请日：2021-01-27

Applicant: Infineon Technologies AG

Inventor： Markus ECKINGER ,  Dirk HAMMERSCHMIDT ,  Florian BRANDL ,  Bernhard WINKLER

IPC: G01L9/00 ,  B81B3/00 ,  B81C3/00

Abstract: A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

公开(公告)号：US20200331748A1

公开(公告)日：2020-10-22

申请号：US16387918

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200283286A1

公开(公告)日：2020-09-10

申请号：US16291412

申请日：2019-03-04

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH ,  Sebastian LUBER ,  Roland MEIER ,  Bernhard WINKLER

IPC: B81B3/00 ,  B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.