公开(公告)号：US20220069203A1

公开(公告)日：2022-03-03

申请号：US17445858

申请日：2021-08-25

Applicant: Infineon Technologies AG

Inventor： Momtchil STAVREV ,  Dirk MEINHOLD

IPC: H01L43/06 ,  H01L43/04 ,  B81B3/00

Abstract: A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

公开(公告)号：US20230102575A1

公开(公告)日：2023-03-30

申请号：US17934057

申请日：2022-09-21

Applicant: Infineon Technologies AG

Inventor： Daniel KÖHLER ,  Vlad BUICULESCU ,  Florian BRANDL ,  Dirk MEINHOLD ,  Erhard LANDGRAF ,  Rainer Markus SCHALLER ,  Markus ECKINGER

IPC: G01L19/00 ,  G01P1/00 ,  G01P15/08 ,  B60L58/10

Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.

公开(公告)号：US20140284663A1

公开(公告)日：2014-09-25

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Emanuele Bruno BODINI ,  Felix BRAUN ,  Hermann GRUBER ,  Uwe HOECKELE ,  Dirk OFFENBERG ,  Klemens PRUEGL ,  Ines UHLIG

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

Abstract translation: 示出并描绘了与成像器和成像器件的制造方法有关的实施例。

公开(公告)号：US20140145281A1

公开(公告)日：2014-05-29

申请号：US14093172

申请日：2013-11-29

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning FEICK ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Ines UHLIG ,  Thoralf KAUTZSCH ,  Dirk MEINHOLD ,  Hanno MELZNER

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

Abstract translation: 描述和描绘与光电荷载体的控制相关的实施例。 至少一个实施例提供了包括光转换区域以将光转换成光生电荷载流子的半导体衬底; 用于积累光生电荷载流子的区域; 控制电极结构，其包括多个控制电极，以产生电位分布，使得所述光生载流子基于施加到所述控制电极结构的信号而被引导到所述区域以累积所述光生电荷载流子; 在半导体衬底中的不均匀掺杂分布，以在光转换区域的至少一部分中产生具有垂直场矢量分量的电场

公开(公告)号：US20200283286A1

公开(公告)日：2020-09-10

申请号：US16291412

申请日：2019-03-04

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH ,  Sebastian LUBER ,  Roland MEIER ,  Bernhard WINKLER

IPC: B81B3/00 ,  B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

公开(公告)号：US20180208461A1

公开(公告)日：2018-07-26

申请号：US15928275

申请日：2018-03-22

Applicant: Infineon Technologies AG

Inventor： Christian BRETTHAUER ,  Dirk MEINHOLD

IPC: B81C1/00

Abstract: A semiconductor element includes a processed substrate arrangement including a processed semiconductor substrate and a metallization layer arrangement on a main surface of the processed semiconductor substrate. The semiconductor element further includes a passivation layer arranged at an outer border of the processed substrate arrangement.

公开(公告)号：US20180172724A1

公开(公告)日：2018-06-21

申请号：US15899979

申请日：2018-02-20

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/12 ,  G01P15/0802 ,  H01L41/25

Abstract: Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.

公开(公告)号：US20160244326A1

公开(公告)日：2016-08-25

申请号：US15051310

申请日：2016-02-23

Applicant: Infineon Technologies AG

Inventor： Christian BRETTHAUER ,  Dirk MEINHOLD

IPC: B81C1/00

CPC classification number: B81C1/00904 ,  B81B2201/0264 ,  B81B2207/015 ,  B81B2207/07

Abstract: A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor substrate and a metallization layer structure on a main surface of the processed semiconductor substrate. The method further includes release etching for generating a kerf in the metallization layer structure at a separation region in the processed semiconductor substrate, the separation region defining a border between a die region of the processed substrate arrangement and at least a second region of the processed substrate arrangement.

Abstract translation: 提供半导体元件和方法，使得该方法包括在处理的半导体衬底的主表面上提供包括处理的半导体衬底和金属化层结构的经处理的衬底布置。 该方法还包括用于在经处理的半导体衬底中的分离区域处在金属化层结构中产生切口的释放蚀刻，所述分离区限定处理过的衬底布置的管芯区域与处理衬底的至少第二区域之间的边界 安排。