公开(公告)号：US20200346922A1

公开(公告)日：2020-11-05

申请号：US16929376

申请日：2020-07-15

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH

IPC: B81B7/00

Abstract: A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.

公开(公告)号：US20200331748A1

公开(公告)日：2020-10-22

申请号：US16387918

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200283286A1

公开(公告)日：2020-09-10

申请号：US16291412

申请日：2019-03-04

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH ,  Sebastian LUBER ,  Roland MEIER ,  Bernhard WINKLER

IPC: B81B3/00 ,  B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

公开(公告)号：US20210032097A1

公开(公告)日：2021-02-04

申请号：US17076250

申请日：2020-10-21

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200317508A1

公开(公告)日：2020-10-08

申请号：US16373938

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Robert GRUENBERGER ,  Wolfram LANGHEINRICH

IPC: B81B7/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.

公开(公告)号：US20130330870A1

公开(公告)日：2013-12-12

申请号：US13685684

申请日：2012-11-26

Applicant: Infineon Technologies AG

Inventor： Karlheinz Mueller ,  Robert GRUENBERGER ,  WINKLER Bernhard

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0742

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.