公开(公告)号：US20230207511A1

公开(公告)日：2023-06-29

申请号：US18084144

申请日：2022-12-19

申请人： Infineon Technologies AG

发明人： Marco Rasel ,  Steffen Knust ,  Sven Sebastian Buchholz

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/485 ,  H01L23/055

CPC分类号： H01L24/37 ,  H01L23/49575 ,  H01L23/49541 ,  H01L23/485 ,  H01L23/055 ,  H01L24/29 ,  H01L2224/37599 ,  H01L2224/2902

摘要： A bus bar for a power semiconductor module arrangement includes a first end, and a second end. The first end is configured to be arranged inside a housing of the power semiconductor module arrangement. The second end is configured to be arranged outside of the housing and to be electrically contacted by an external bus bar. The second end includes a structured area that includes a plurality of protrusions. A height of each of the protrusions is between 10 μm and 1000 μm.