公开(公告)号：US20230207511A1

公开(公告)日：2023-06-29

申请号：US18084144

申请日：2022-12-19

Applicant: Infineon Technologies AG

Inventor： Marco Rasel ,  Steffen Knust ,  Sven Sebastian Buchholz

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/485 ,  H01L23/055

CPC classification number: H01L24/37 ,  H01L23/49575 ,  H01L23/49541 ,  H01L23/485 ,  H01L23/055 ,  H01L24/29 ,  H01L2224/37599 ,  H01L2224/2902

Abstract: A bus bar for a power semiconductor module arrangement includes a first end, and a second end. The first end is configured to be arranged inside a housing of the power semiconductor module arrangement. The second end is configured to be arranged outside of the housing and to be electrically contacted by an external bus bar. The second end includes a structured area that includes a plurality of protrusions. A height of each of the protrusions is between 10 μm and 1000 μm.

公开(公告)号：US20220005708A1

公开(公告)日：2022-01-06

申请号：US17362076

申请日：2021-06-29

Applicant: Infineon Technologies AG

Inventor： Marco Rasel ,  Elvis Keli

IPC: H01L21/48 ,  H01L23/13 ,  H01L23/498 ,  H01L23/367

Abstract: A method comprises producing a base plate, wherein producing the base plate comprises forming a layer of a metallic material, and forming at least one first area in the layer of metallic material, wherein forming the at least one first area either comprises locally deforming the layer of metallic material, or locally inducing stress into the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.