摘要:
A bus bar for a power semiconductor module arrangement includes a first end, and a second end. The first end is configured to be arranged inside a housing of the power semiconductor module arrangement. The second end is configured to be arranged outside of the housing and to be electrically contacted by an external bus bar. The second end includes a structured area that includes a plurality of protrusions. A height of each of the protrusions is between 10 μm and 1000 μm.
摘要:
The electronic module includes a first carrier and a first semiconductor chip arranged on the first carrier. A second semiconductor chip is arranged above the first semiconductor chip. A material layer adheres the second semiconductor chip to the first carrier and encapsulates the first semiconductor chip.
摘要:
A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.
摘要:
A package system includes a first substrate. A second substrate is electrically coupled with the first substrate. At least one electrical bonding material is disposed between the first substrate and the second substrate. The at least one electrical bonding material includes a eutectic bonding material. The eutectic bonding material includes a metallic material and a semiconductor material. The metallic material is disposed adjacent to a surface of the first substrate. The metallic material includes a first pad and at least one first guard ring around the first pad.
摘要:
A package system includes a first substrate and a second substrate. The second substrate is electrically coupled with the first substrate. The second substrate includes at least one first opening. At least one electrical bonding material is disposed between the first substrate and the second substrate. A first portion of the at least one electrical bonding material is at least partially filled in the at least one first opening.
摘要:
A semiconductor package includes a substrate, a first chip stack on the substrate and including a first semiconductor chip, an underfill pattern on a first side of the first chip stack, and a second chip stack on the first chip stack and including a second semiconductor chip. The second chip stack is stacked so as to be offset to the first chip stack. The first chip stack includes a first adhesive layer under the first semiconductor chip and a first chip protection structure on the first semiconductor chip. The second chip stack includes a second adhesive layer under the second semiconductor chip and a second chip protection structure on the second semiconductor chip. An extension portion of the second adhesive layer is on one side of the first chip protection structure, and the underfill pattern extends from the first side of the first chip stack to the extension portion.
摘要:
A semiconductor structure and a manufacturing method thereof are disclosed. The semiconductor structure includes a semiconductor substrate, a metal pad, a bump, a metal barrier layer, and a solder layer. The metal pad is arranged on the semiconductor substrate; the bump is arranged on the metal pad; the metal barrier layer is arranged on the side of the bump away from the metal pad; the metal barrier layer contains a storage cavity; the sidewall of the metal barrier layer is configured with an opening connecting to the storage cavity; the solder layer is arranged inside the storage cavity, and the top side of the solder layer protrudes from the upper side of storage cavity. During the flip-chip soldering process, solder is heated to overflow, the opening allows the solder flow out through the opening. The openings achieve good solder diversion in overflow, thus mitigating the problem of solder bridging between bumps.
摘要:
A package system includes a first substrate; and a second substrate electrically coupled with the first substrate. The package system further includes a semiconductor material between the first substrate and the second substrate. The semiconductor material includes a pad, and at least one guard ring surrounding the pad and spaced from the pad. The package system further includes a metallic material bonded to the semiconductor material, wherein the metallic material at least partially fills at least one opening in at least one of the first substrate or the second substrate.
摘要:
A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.
摘要:
Various embodiments provide a chip. The chip may include a body having two main surfaces and a plurality of side surfaces; a first power electrode extending over at least one main surface and at least one side surface of the body; and a second power electrode extending over at least one main surface and at least one side surface of the body.