公开(公告)号：US20180151765A1

公开(公告)日：2018-05-31

申请号：US15881100

申请日：2018-01-26

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  lnes Uhlig ,  ThoraIf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region