公开(公告)号：US20180047582A1

公开(公告)日：2018-02-15

申请号：US15671228

申请日：2017-08-08

申请人： Infineon Technologies Dresden GmbH

发明人： Marko Lemke ,  Alfred Vater ,  Carsten Moritz

IPC分类号： H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  B81C1/00 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L21/306 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device includes forming an etching mask over a semiconductor body, forming a plurality of trenches in the semiconductor body to define a plurality of protruding semiconductor portions between adjacent trenches, and forming a protection layer in contact with a semiconductor material of the protruding semiconductor portions. The method further includes performing a wet etching step to remove portions of the etching mask and, thereafter, treating the semiconductor body with a mixture of hydrofluoric acid and ethylene glycol and bringing the semiconductor material of sidewalls of the plurality of protruding semiconductor portions into contact with the mixture of hydrofluoric acid and ethylene glycol.