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公开(公告)号：US20230145562A1
公开(公告)日：2023-05-11
申请号：US17977346
申请日：2022-10-31
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L21/761
CPC分类号： H01L29/7815 , H01L29/0615 , H01L29/7811 , H01L29/1095 , H01L21/761
摘要： A semiconductor device includes: a semiconductor body having a first surface, a second surface opposite to the first surface in a vertical direction, an active region, and a sensor region arranged adjacent to the active region in a horizontal direction; transistor cells at least partly integrated in the active region, each transistor cell including a drift region separated from a source region by a body region, and a gate electrode dielectrically insulated from the body region; at least one sensor cell at least partly integrated in the sensor region, each sensor cell including a drift region separated from a source region by a body region, and a gate electrode dielectrically insulated from the body region; and an intermediate region arranged between the active region and the sensor region, the intermediate region including a drift region and an undoped semiconductor region extending from the first surface into the drift region.
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公开(公告)号：US20230119393A1
公开(公告)日：2023-04-20
申请号：US17966222
申请日：2022-10-14
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/40 , H03K17/0812
摘要： A semiconductor device includes a semiconductor body having first and second opposing surfaces in a vertical direction, and transistor cells at least partly integrated in the semiconductor body. Each transistor cell includes first and second source regions, first and second body regions, a drift region separated from the respective source region by the corresponding body region, a first gate electrode, and a control electrode. The drift region is arranged between the first and the second body region in a horizontal direction that is perpendicular to the vertical direction and extends from the first surface into the semiconductor body in the vertical direction. The first gate electrode is configured to provide a control signal for switching the transistor cell. The control electrode is configured to provide a control signal for controlling a JFET formed by the first body region, the drift region, and the second body region.
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公开(公告)号：US20220384567A1
公开(公告)日：2022-12-01
申请号：US17745946
申请日：2022-05-17
IPC分类号： H01L29/06 , H01L29/808 , H01L29/10 , H01L27/088
摘要： A transistor arrangement is disclosed. The transistor arrangement includes a first transistor device and a second transistor device. The first transistor device and the second transistor device are connected in series and integrated in a common semiconductor body. The first transistor device is a lateral superjunction transistor device and is integrated in a first device region of the semiconductor body. The second transistor device is a lateral transistor device and is integrated in at least one second device region of the semiconductor body. The at least one second device region is spaced apart from the first device region.
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公开(公告)号：US10692970B2
公开(公告)日：2020-06-23
申请号：US16191088
申请日：2018-11-14
发明人： Katarzyna Kowalik-Seidl , Ayad Abdul-Hak , Olaf Fiedler , Richard Hensch , Markus Schmitt , Daniel Kai Simon
IPC分类号： H01L29/06 , H01L29/08 , H01L29/36 , H01L29/78 , H01L29/417
摘要： A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.
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公开(公告)号：US10483383B2
公开(公告)日：2019-11-19
申请号：US15921044
申请日：2018-03-14
IPC分类号： H01L29/73 , H01L29/06 , H01L27/06 , H01L29/40 , H01L29/43 , H01L29/78 , H01L29/423 , H01L29/66 , H01L29/739 , H01L49/02 , H01L29/10
摘要： A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.
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公开(公告)号：US20190148484A1
公开(公告)日：2019-05-16
申请号：US16191088
申请日：2018-11-14
发明人： Katarzyna Kowalik-Seidl , Ayad Abdul-Hak , Olaf Fiedler , Richard Hensch , Markus Schmitt , Daniel Kai Simon
摘要： A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.
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公开(公告)号：US20200044064A1
公开(公告)日：2020-02-06
申请号：US16653482
申请日：2019-10-15
IPC分类号： H01L29/73 , H01L29/06 , H01L27/06 , H01L29/40 , H01L29/43 , H01L29/78 , H01L29/66 , H01L29/423 , H01L29/739
摘要： A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.
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