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公开(公告)号：US11424358B2
公开(公告)日：2022-08-23
申请号：US16838189
申请日：2020-04-02
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/49 , H01L29/66
摘要： A semiconductor device includes a semiconductor body comprising a first surface, a second surface opposite to the first surface, an active region, and an edge region surrounding the active region in a horizontal plane. The semiconductor device further includes a plurality of transistor cells at least partly integrated in the active region. Each transistor cell includes a drift region separated from a source region by a body region, and a gate electrode dielectrically insulated from the body region. The semiconductor device also includes a sensor device having a first sensor region of a first doping type integrated in the edge region. The first sensor region is electrically coupled to a first contact pad and to a second contact pad. Each contact pad is arranged either on the first surface or on the second surface. The sensor device at least partially extends around the active region.
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公开(公告)号：US20200321463A1
公开(公告)日：2020-10-08
申请号：US16838189
申请日：2020-04-02
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/08 , H01L29/66 , H01L29/49 , H01L29/10
摘要： A semiconductor device includes a semiconductor body comprising a first surface, a second surface opposite to the first surface, an active region, and an edge region surrounding the active region in a horizontal plane. The semiconductor device further includes a plurality of transistor cells at least partly integrated in the active region. Each transistor cell includes a drift region separated from a source region by a body region, and a gate electrode dielectrically insulated from the body region. The semiconductor device also includes a sensor device having a first sensor region of a first doping type integrated in the edge region. The first sensor region is electrically coupled to a first contact pad and to a second contact pad. Each contact pad is arranged either on the first surface or on the second surface. The sensor device at least partially extends around the active region.
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公开(公告)号：US20200243505A1
公开(公告)日：2020-07-30
申请号：US16750958
申请日：2020-01-23
发明人： Joachim Weyers
IPC分类号： H01L27/02 , H01L23/522
摘要： In an embodiment, a semiconductor die includes a transistor device that has a cell field and an edge termination region, a source pad arranged on the cell field, a gate pad laterally arranged laterally adjacent the cell field and in the edge termination region, a shielding region laterally surrounding the cell field, the shielding region including a non-depletable doped. The polysilicon ESD protection diode is arranged laterally between the gate pad and the source pad and vertically above at least a portion of the shielding region, and includes at least two separate sections that are electrically coupled in parallel between the gate pad and the source pad. The sections are laterally spaced apart by a gap situated at a corner of the gate pad.
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公开(公告)号：US10354992B2
公开(公告)日：2019-07-16
申请号：US15718456
申请日：2017-09-28
IPC分类号： H01L27/02 , H01L27/07 , H01L29/06 , H01L29/10 , H01L29/36 , H01L29/40 , H01L29/45 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/866
摘要： A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of a semiconductor substrate of the semiconductor device. The diode structure includes at least one diode pn-junction. A substrate pn-junction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between a shielding doping region and an edge doping portion. The edge doping portion is located adjacent to the shielding doping region within the semiconductor substrate. At the front side surface of the semiconductor substrate, the substrate pn-junction is located laterally between the diode pn-junction and a source contact region of the diode structure with the source electrode structure.
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公开(公告)号：US10971620B2
公开(公告)日：2021-04-06
申请号：US16447207
申请日：2019-06-20
发明人： Joachim Weyers , Andreas Boehm , Anton Mauder , Patrick Schindler , Stefan Tegen , Armin Tilke , Uwe Wahl
摘要： A method includes partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process to form at least one undercut between the first semiconductor layer and the second semiconductor layer, at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer, and forming a sensor device in or on the second semiconductor layer. Semiconductor arrangements and devices produced by the method are also described.
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公开(公告)号：US10741541B2
公开(公告)日：2020-08-11
申请号：US15284675
申请日：2016-10-04
发明人： Joachim Weyers , Markus Schmitt , Armin Tilke , Stefan Tegen , Thomas Bertrams
IPC分类号： H01L27/02 , H01L21/762 , H01L21/02 , H01L29/66 , H01L29/861 , H01L21/76 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/739 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.
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公开(公告)号：US10483383B2
公开(公告)日：2019-11-19
申请号：US15921044
申请日：2018-03-14
IPC分类号： H01L29/73 , H01L29/06 , H01L27/06 , H01L29/40 , H01L29/43 , H01L29/78 , H01L29/423 , H01L29/66 , H01L29/739 , H01L49/02 , H01L29/10
摘要： A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.
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公开(公告)号：US20200044064A1
公开(公告)日：2020-02-06
申请号：US16653482
申请日：2019-10-15
IPC分类号： H01L29/73 , H01L29/06 , H01L27/06 , H01L29/40 , H01L29/43 , H01L29/78 , H01L29/66 , H01L29/423 , H01L29/739
摘要： A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.
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公开(公告)号：US11430781B2
公开(公告)日：2022-08-30
申请号：US16750958
申请日：2020-01-23
发明人： Joachim Weyers
IPC分类号： H01L27/02 , H01L23/522
摘要： In an embodiment, a semiconductor die includes a transistor device that has a cell field and an edge termination region, a source pad arranged on the cell field, a gate pad laterally arranged laterally adjacent the cell field and in the edge termination region, a shielding region laterally surrounding the cell field, the shielding region including a non-depletable doped. The polysilicon ESD protection diode is arranged laterally between the gate pad and the source pad and vertically above at least a portion of the shielding region, and includes at least two separate sections that are electrically coupled in parallel between the gate pad and the source pad. The sections are laterally spaced apart by a gap situated at a corner of the gate pad.
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公开(公告)号：US20190393334A1
公开(公告)日：2019-12-26
申请号：US16447207
申请日：2019-06-20
发明人： Joachim Weyers , Andreas Boehm , Anton Mauder , Patrick Schindler , Stefan Tegen , Armin Tilke , Uwe Wahl
摘要： A method includes partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process to form at least one undercut between the first semiconductor layer and the second semiconductor layer, at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer, and forming a sensor device in or on the second semiconductor layer. Semiconductor arrangements and devices produced by the method are also described.
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