公开(公告)号：US06312568B2

公开(公告)日：2001-11-06

申请号：US09456130

申请日：1999-12-07

申请人： Ingo Wilke ,  Rochelle King ,  Hoa Kieu

发明人： Ingo Wilke ,  Rochelle King ,  Hoa Kieu

IPC分类号： C23C1434

CPC分类号： C23C14/0042 ,  C23C14/0617 ,  H01L41/316

摘要： The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C. The advantages provided by the invention include an improved deposition rate for aluminum nitride with a preferred crystal orientation and improved layer properties.

摘要翻译： 本发明提供了一种在处理室中的衬底上形成氮化铝层的方法，该方法包括：在第一室压力下在衬底上沉积第一氮化铝层，然后在第二室压力下沉积第二氮化铝层， 氮化铝成核层上的第一室压力。 通过在约1.5至约3毫乇的室压力下在处理室中将氮靶和惰性气体等离子体中的铝靶溅射到第一氮化铝层。 第二氮化铝层通过在约5至约10毫乇的室压力下将铝靶溅射在氮气和惰性气体等离子体中来沉积。 该方法可以在相同的物理气相沉积室中进行，其中基底保持在约125℃至约500℃之间的温度。本发明提供的优点包括改进的氮化铝沉积速率 优选的晶体取向和改进的层性质。