公开(公告)号：US5911113A

公开(公告)日：1999-06-08

申请号：US820512

申请日：1997-03-18

申请人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

发明人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522

CPC分类号： H01L21/76843 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002

摘要： A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed "warm", i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

摘要翻译： 一种用于在半导体工件中制造诸如铝塞的金属插头的工艺。 本发明适用于填充狭窄的高纵横比孔，并且本发明使塞子和润湿层之间的TiAl 3或其他相互扩散产物的形成最小化。 首先，通过用含有掺杂硅的氮化钛的膜覆盖孔的底部来产生可选的阻挡层。 第二，通过用含有掺杂硅的钛的膜覆盖孔的侧壁，Ti：Si摩尔比大于1:2产生润湿层。 优选地，通过使用含有0.1重量％至20重量％硅，最优选5重量％至10重量％硅的钛溅射靶的溅射沉积来产生润湿层。 第三，通过沉积主要由铝构成的材料填充孔。 优选地，通过使用铝溅射靶的溅射沉积来填充孔，任选地含有诸如铜的掺杂剂。 为了方便填充孔而没有空隙，铝溅射沉积优选地进行“暖”，即工件在低于铝的熔点的温度下，但足够高以促进沉积材料的回流。 润湿层中的硅原子阻止钛与铝反应，并且润湿层有助于用铝材料填充孔而不留下未填充的空隙。

公开(公告)号：US5780357A

公开(公告)日：1998-07-14

申请号：US867276

申请日：1997-06-02

申请人： Zheng Xu ,  Hoa Kieu

发明人： Zheng Xu ,  Hoa Kieu

IPC分类号： H01L21/285 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01L21/203 ,  H01L21/768 ,  H01L21/28

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/3447 ,  H01L21/76882 ,  H01J2237/3327

摘要： A method and apparatus for depositing material to conformally cover or fill holes within the surface of a semiconductor substrate. The preferred method includes the steps of coherently depositing a first thickness of the material onto the surface of the substrate; reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material; after the first thickness of the material is deposited onto the surface of the substrate, depositing a second thickness of the material onto the surface of the substrate; and while depositing the second thickness of the material onto the surface of the substrate, heating the substrate to enhance reflow of the material being deposited.

公开(公告)号：US5847461A

公开(公告)日：1998-12-08

申请号：US664717

申请日：1996-06-17

申请人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

发明人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53223 ,  H01L21/76877 ,  H01L2924/0002

摘要： A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.

摘要翻译： 描述了使用在绝缘层上形成的金属层作为填充材料填充绝缘层中的开口并且作为图案化的金属互连或线束在绝缘层的表面上的工艺和结果。 该方法包括以下步骤：在预先形成的开口的绝缘层上形成压电应力金属层到绝缘层下面的材料; 在压应力金属层上形成高抗拉强度的覆盖层; 然后将结构加热到足以使压应力金属层向下挤压到下面的绝缘层中的开口中的温度。 上覆盖层具有足够的拉伸强度，以防止或抑制压应力金属层向上挤出以形成需要去除的小丘，即通过平坦化。 压缩应力金属层随后加热使其挤出的温度应小于压应力金属层的熔点。

公开(公告)号：US5668055A

公开(公告)日：1997-09-16

申请号：US435774

申请日：1995-05-05

申请人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

发明人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76877 ,  H01L2924/0002

摘要： A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.

摘要翻译： 描述了使用在绝缘层上形成的金属层作为填充材料填充绝缘层中的开口并且作为图案化的金属互连或线束在绝缘层的表面上的工艺和结果。 该方法包括以下步骤：在预先形成的开口的绝缘层上形成压电应力金属层到绝缘层下面的材料; 在压应力金属层上形成高抗拉强度的覆盖层; 然后将结构加热到足以使压应力金属层向下挤压到下面的绝缘层中的开口中的温度。 上覆盖层具有足够的拉伸强度，以防止或抑制压应力金属层向上挤出以形成需要去除的小丘，即通过平坦化。 压缩应力金属层随后加热使其挤出的温度应小于压应力金属层的熔点。

公开(公告)号：US20050136691A1

公开(公告)日：2005-06-23

申请号：US10857181

申请日：2004-05-28

申请人： Hien-Minh Le ,  Hoa Kieu

发明人： Hien-Minh Le ,  Hoa Kieu

IPC分类号： C23C14/08 ,  C23C14/56 ,  H01J37/34 ,  H01L21/322 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C14/083 ,  C23C14/56 ,  H01J37/32706 ,  H01J37/3408

摘要： A method of depositing a dielectric film, such as tantalum oxide, on a substrate is described. In one example, a substrate is placed in a process zone to face a metal target and a pulsed DC voltage is applied to the target. A sputtering gas comprising a non-reactive component and an oxygen-containing component is introduced to the process zone in a volumetric flow ratio selected to achieve the desired x and y values in the deposited dielectric film, for example, in the deposition of a non-stoichiometric TaxOy film or in the deposition of a tantalum oxide film in which the oxidation state of tantalum is less than +5. The sputtering gas is removed from the process zone by condensing at least some of the non-reactive component on a cooled surface external to the process zone, and exhausting at least some of the oxygen-containing component from the process zone with moving rotors. A multiple layer dielectric film having different stoichiometric ratios in the layers can also be deposited by the instant method.

公开(公告)号：US06232665B1

公开(公告)日：2001-05-15

申请号：US09328117

申请日：1999-06-08

申请人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

发明人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

IPC分类号： H01L2348

CPC分类号： H01L21/76843 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed “warm”, i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

摘要翻译： 一种用于在半导体工件中制造诸如铝塞的金属插头的工艺。 本发明适用于填充狭窄的高纵横比孔，并且本发明使塞子和润湿层之间的TiAl 3或其他相互扩散产物的形成最小化。 首先，通过用含有掺杂硅的氮化钛的膜覆盖孔的底部来产生可选的阻挡层。 第二，通过用含有掺杂硅的钛的膜覆盖孔的侧壁，Ti：Si摩尔比大于1:2产生润湿层。 优选地，通过使用含有0.1重量％至20重量％硅，最优选5重量％至10重量％硅的钛溅射靶的溅射沉积来产生润湿层。 第三，通过沉积主要由铝构成的材料填充孔。 优选地，通过使用铝溅射靶的溅射沉积来填充孔，任选地含有诸如铜的掺杂剂。 为了方便填充孔而没有空隙，铝溅射沉积优选地进行“暖”，即工件在低于铝的熔点的温度下，但足够高以促进沉积材料的回流。 润湿层中的硅原子阻止钛与铝反应，并且润湿层有助于用铝材料填充孔而不留下未填充的空隙。

公开(公告)号：US06312568B2

公开(公告)日：2001-11-06

申请号：US09456130

申请日：1999-12-07

申请人： Ingo Wilke ,  Rochelle King ,  Hoa Kieu

发明人： Ingo Wilke ,  Rochelle King ,  Hoa Kieu

IPC分类号： C23C1434

CPC分类号： C23C14/0042 ,  C23C14/0617 ,  H01L41/316

摘要： The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C. The advantages provided by the invention include an improved deposition rate for aluminum nitride with a preferred crystal orientation and improved layer properties.

摘要翻译： 本发明提供了一种在处理室中的衬底上形成氮化铝层的方法，该方法包括：在第一室压力下在衬底上沉积第一氮化铝层，然后在第二室压力下沉积第二氮化铝层， 氮化铝成核层上的第一室压力。 通过在约1.5至约3毫乇的室压力下在处理室中将氮靶和惰性气体等离子体中的铝靶溅射到第一氮化铝层。 第二氮化铝层通过在约5至约10毫乇的室压力下将铝靶溅射在氮气和惰性气体等离子体中来沉积。 该方法可以在相同的物理气相沉积室中进行，其中基底保持在约125℃至约500℃之间的温度。本发明提供的优点包括改进的氮化铝沉积速率 优选的晶体取向和改进的层性质。

公开(公告)号：US6033541A

公开(公告)日：2000-03-07

申请号：US14664

申请日：1998-01-28

申请人： Zheng Xu ,  Hoa Kieu

发明人： Zheng Xu ,  Hoa Kieu

IPC分类号： H01L21/285 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01L21/203 ,  H01L21/768

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/3447 ,  H01L21/76882 ,  H01J2237/3327

摘要： A method and apparatus for depositing material to conformally cover or fill holes within the surface of a semiconductor substrate. The preferred method includes the steps of coherently depositing a first thickness of the material onto the surface of the substrate; reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material; after the first thickness of the material is deposited onto the surface of the substrate, depositing a second thickness of the material onto the surface of the substrate; and while depositing the second thickness of the material onto the surface of the substrate, heating the substrate to enhance reflow of the material being deposited.

摘要翻译： 一种用于沉积材料以在半导体衬底的表面内共形覆盖或填充孔的材料的方法和装置。 优选的方法包括将材料的第一厚度相干沉积到衬底的表面上的步骤; 反向溅射沉积的材料以便用沉积的材料涂覆接触孔的侧壁; 在材料的第一厚度沉积到衬底的表面上之后，将材料的第二厚度沉积到衬底的表面上; 并且同时将材料的第二厚度沉积到衬底的表面上，加热衬底以增强被沉积材料的回流。