公开(公告)号：US10709012B2

公开(公告)日：2020-07-07

申请号：US15858004

申请日：2017-12-29

Applicant: Innolux Corporation

Inventor： Yan-Syun Wang ,  Chi-Che Tsai ,  Wei-Yen Wu ,  I-Yin Li

IPC: H05K1/02 ,  H05K3/10 ,  H01P3/08 ,  H05K3/22

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

公开(公告)号：US10115696B2

公开(公告)日：2018-10-30

申请号：US15239885

申请日：2016-08-18

Applicant: InnoLux Corporation

Inventor： Yan-Syun Wang ,  Chi-Che Tsai ,  Chien-Feng Li ,  Wei yun Chang ,  Wei-Hsien Chang ,  Po-Ching Lin

IPC: H01L23/00 ,  H01L21/762 ,  H01L21/02

Abstract: An electronic device is disclosed, which comprises: a first substrate; an adhesion layer disposed on the first substrate and comprising a condensation product of silane or derivatives thereof; an inorganic layer disposed on the adhesion layer; and an active unit disposed on the inorganic layer. In addition, the present disclosure also provides a method for manufacturing the aforementioned electronic device.